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pro vyhledávání: '"Liu, Weilong Yuan"'
Publikováno v:
Crystals; Volume 13; Issue 6; Pages: 935
In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot-wall CVD reactor. The research aimed to investigate the impact of varying the C/Si ratio and temperature while also changing the N2 flow r