Zobrazeno 1 - 10
of 3 397
pro vyhledávání: '"Liu, C. -W."'
We develop a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts in the ungated area outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of t
Externí odkaz:
http://arxiv.org/abs/2405.18229
Publikováno v:
Phys. Rev. B 109, L041114 (2024)
We report the observation of two-threshold voltage-current characteristics accompanied by a peak of broadband current noise between the two threshold voltages in the insulating state at low densities in the 2D electron system in ultra-high mobility S
Externí odkaz:
http://arxiv.org/abs/2310.03145
Autor:
Melnikov, M. Yu., Shakirov, A. A., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
Publikováno v:
Sci. Rep. 13, 17364 (2023)
The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effect
Externí odkaz:
http://arxiv.org/abs/2304.04272
Autor:
Achasov, M., Ai, X. C., Aliberti, R., An, L. P., An, Q., Bai, X. Z., Bai, Y., Bakina, O., Barnyakov, A., Blinov, V., Bobrovnikov, V., Bodrov, D., Bogomyagkov, A., Bondar, A., Boyko, I., Bu, Z. H., Cai, F. M., Cai, H., Cao, J. J., Cao, Q. H., Cao, Z., Chang, Q., Chao, K. T., Chen, D. Y., Chen, H., Chen, H. X., Chen, J. F., Chen, K., Chen, L. L., Chen, P., Chen, S. L., Chen, S. M., Chen, S., Chen, S. P., Chen, W., Chen, X. F., Chen, X., Chen, Y., Chen, Y. Q., Cheng, H. Y., Cheng, J., Cheng, S., Dai, J. P., Dai, L. Y., Dai, X. C., Dedovich, D., Denig, A., Denisenko, I., Ding, D. Z., Dong, L. Y., Dong, W. H., Druzhinin, V., Du, D. S., Du, Y. J., Du, Z. G., Duan, L. M., Epifanov, D., Fan, Y. L., Fang, S. S., Fang, Z. J., Fedotovich, G., Feng, C. Q., Feng, X., Feng, Y. T., Fu, J. L., Gao, J., Ge, P. S., Geng, C. Q., Geng, L. S., Gilman, A., Gong, L., Gong, T., Gradl, W., Gu, J. L., Escalante, A. G., Gui, L. C., Guo, F. K., Guo, J. C., Guo, J., Guo, Y. P., Guo, Z. H., Guskov, A., Han, K. L., Han, L., Han, M., Hao, X. Q., He, J. B., He, S. Q., He, X. G., He, Y. L., He, Z. B., Heng, Z. X., Hou, B. L., Hou, T. J., Hou, Y. R., Hu, C. Y., Hu, H. M., Hu, K., Hu, R. J., Hu, X. H., Hu, Y. C., Hua, J., Huang, G. S., Huang, J. S., Huang, M., Huang, Q. Y., Huang, W. Q., Huang, X. T., Huang, X. J., Huang, Y. B., Huang, Y. S., Hüsken, N., Ivanov, V., Ji, Q. P., Jia, J. J., Jia, S., Jia, Z. K., Jiang, H. B., Jiang, J., Jiang, S. Z., Jiao, J. B., Jiao, Z., Jing, H. J., Kang, X. L., Kang, X. S., Ke, B. C., Kenzie, M., Khoukaz, A., Koop, I., Kravchenko, E., Kuzmin, A., Lei, Y., Levichev, E., Li, C. H., Li, C., Li, D. Y., Li, F., Li, G., Li, H. B., Li, H., Li, H. N., Li, H. J., Li, H. L., Li, J. M., Li, J., Li, L., Li, L. Y., Li, N., Li, P. R., Li, R. H., Li, S., Li, T., Li, W. J., Li, X. H., Li, X. Q., Li, Y., Li, Y. Y., Li, Z. J., Liang, H., Liang, J. H., Liao, G. R., Liao, L. Z., Liao, Y., Lin, C. X., Lin, X. S., Liu, B. J., Liu, C. W., Liu, D., Liu, F., Liu, G. M., Liu, H. B., Liu, J., Liu, J. J., Liu, J. B., Liu, K., Liu, K. Y., Liu, L., Liu, Q., Liu, S. B., Liu, T., Liu, X., Liu, Y. W., Liu, Y., Liu, Y. L., Liu, Z. Q., Liu, Z. Y., Liu, Z. W., Logashenko, I., Long, Y., Lu, C. G., Lu, N., Lü, Q. F., Lu, Y., Lv, Z., Lukin, P., Luo, F. J., Luo, T., Luo, X. F., Lyu, H. J., Lyu, X. R., Ma, J. P., Ma, P., Ma, Y., Maas, F., Malde, S., Matvienko, D., Meng, Z. X., Mitchell, R., Dias, J. M., Nefediev, A., Nefedov, Y., Olsen, S. L., Ouyang, Q., Pakhlov, P., Pakhlova, G., Pan, X., Pan, Y., Passemar, E., Pei, Y. P., Peng, H. P., Peng, L., Peng, X. Y., Peng, X. J., Peters, K., Pivovarov, S., Pyata, E., Qi, B. B., Qi, Y. Q., Qian, W. B., Qian, Y., Qiao, C. F., Qin, J. J., Qin, L. Q., Qin, X. S., Qiu, T. L., Rademacker, J., Redmer, C. F., Sang, H. Y., Saur, M., Shan, W., Shan, X. Y., Shang, L. L., Shao, M., Shekhtman, L., Shen, C. P., Shen, J. M., Shen, Z. T., Shi, H. C., Shi, X. D., Shwartz, B., Sokolov, A., Song, J. J., Song, W. M., Song, Y., Song, Y. X., Sukharev, A., Sun, J. F., Sun, L., Sun, X. M., Sun, Y. J., Sun, Z. P., Tang, J., Tang, S. S., Tang, Z. B., Tian, C. H., Tian, J. S., Tikhonov, Y., Todyshev, K., Uglov, T., Vorobyev, V., Wan, B. D., Wang, B. L., Wang, B., Wang, D. Y., Wang, G. Y., Wang, G. L., Wang, H. L., Wang, J., Wang, J. H., Wang, J. C., Wang, M. L., Wang, R., Wang, S. B., Wang, W., Wang, W. P., Wang, X. C., Wang, X. D., Wang, X. L., Wang, X. P., Wang, X. F., Wang, Y. D., Wang, Y. P., Wang, Y. Q., Wang, Y. L., Wang, Y. G., Wang, Z. Y., Wang, Z. L., Wang, Z. G., Wei, D. H., Wei, X. L., Wei, X. M., Wen, Q. G., Wen, X. J., Wilkinson, G., Wu, B., Wu, J. J., Wu, L., Wu, P. W., Wu, T. W., Wu, Y. S., Xia, L., Xiang, T., Xiao, C. W., Xiao, D., Xiao, M., Xie, Y. H., Xing, Y., Xing, Z. Z., Xiong, X. N., Xu, F. R., Xu, J., Xu, L. L., Xu, Q. N., Xu, X. C., Xu, X. P., Xu, Y. C., Xu, Y. P., Xu, Y., Xu, Z. Z., Xuan, D. W., Xue, F. F., Yan, L., Yan, M. J., Yan, W. B., Yan, W. C., Yan, X. S., Yang, B. F., Yang, C., Yang, H. J., Yang, H. R., Yang, H. T., Yang, J. F., Yang, S. L., Yang, Y. D., Yang, Y. H., Yang, Y. S., Yang, Y. L., Yang, Z. Y., Yao, D. L., Yin, H., Yin, X. H., Yokozaki, N., You, S. Y., You, Z. Y., Yu, C. X., Yu, F. S., Yu, G. L., Yu, H. L., Yu, J. S., Yu, J. Q., Yuan, L., Yuan, X. B., Yue, Y. F., Zeng, M., Zeng, S., Zhang, A. L., Zhang, B. W., Zhang, G. Y., Zhang, G. Q., Zhang, H. J., Zhang, H. B., Zhang, J. Y., Zhang, J. L., Zhang, J., Zhang, L., Zhang, L. M., Zhang, R., Zhang, S. L., Zhang, T., Zhang, X., Zhang, Y., Zhang, Y. X., Zhang, Y. T., Zhang, Y. F., Zhang, Y. C., Zhang, Y. M., Zhang, Y. L., Zhang, Z. H., Zhang, Z. Y., Zhao, H. Y., Zhao, J., Zhao, L., Zhao, M. G., Zhao, Q., Zhao, R. G., Zhao, R. P., Zhao, Z. G., Zhao, Z. X., Zhemchugov, A., Zheng, B., Zheng, L., Zheng, Q. B., Zheng, R., Zheng, Y. H., Zhong, X. H., Zhou, H. J., Zhou, H. Q., Zhou, H., Zhou, S. H., Zhou, X., Zhou, X. K., Zhou, X. R., Zhou, Y. L., Zhou, Y., Zhou, Y. X., Zhou, Z. Y., Zhu, J. Y., Zhu, K., Zhu, R. D., Zhu, R. L., Zhu, S. H., Zhu, Y. C., Zhu, Z. A., Zhukova, V., Zhulanov, V., Zou, B. S., Zuo, Y. B.
Publikováno v:
Front. Phys. 19(1), 14701 (2024)
The Super $\tau$-Charm facility (STCF) is an electron-positron collider proposed by the Chinese particle physics community. It is designed to operate in a center-of-mass energy range from 2 to 7 GeV with a peak luminosity of $0.5\times 10^{35}{\rm cm
Externí odkaz:
http://arxiv.org/abs/2303.15790
Autor:
Chen, D., Cai, S., Hsu, N. -W., Huang, S. -H., Chuang, Y., Nielsen, E., Li, J. -Y., Liu, C. W., Lu, T. M., Laroche, D.
Publikováno v:
Appl. Phys. Lett. 119, 223103 (2021)
We report low-temperature magneto-transport measurements of an undoped Si/SiGe asymmetric double quantum well heterostructure. The density in both layers is tuned independently utilizing a top and a bottom gate, allowing the investigation of quantum
Externí odkaz:
http://arxiv.org/abs/2112.03138
Autor:
Shashkin, A. A., Melnikov, M. Yu., Dolgopolov, V. T., Radonjić, M. M., Dobrosavljević, V., Huang, S. -H., Liu, C. W., Zhu, Amy Y. X., Kravchenko, S. V.
Publikováno v:
Sci. Rep. 12, 5080 (2022)
The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional elec
Externí odkaz:
http://arxiv.org/abs/2106.05927
Autor:
Dolgopolov, V. T., Melnikov, M. Yu., Shashkin, A. A., Huang, S. -H., Liu, C. W., Kravchenko, S. V.
Publikováno v:
Phys. Rev. B 103, 161302 (2021)
We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers $p=1$, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The
Externí odkaz:
http://arxiv.org/abs/2101.05876
Autor:
Shashkin, A. A., Melnikov, M. Yu., Dolgopolov, V. T., Radonjić, M., Dobrosavljević, V., Huang, S. -H., Liu, C. W., Zhu, A. Y. X., Kravchenko, S. V.
Publikováno v:
Phys. Rev. B 102, 081119(R) (2020)
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at
Externí odkaz:
http://arxiv.org/abs/2004.14968
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