Zobrazeno 1 - 10
of 88
pro vyhledávání: '"Litovchenko, N."'
Publikováno v:
Ukr.J.Phys. 58 (2013) 260-267
Characteristics of GaAs/In$_{x}$Ga$_{1-x}$As/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence spectra and t
Externí odkaz:
http://arxiv.org/abs/1303.3884
Publikováno v:
2022 25th International Symposium on Design and Diagnostics of Electronic Circuits and Systems (DDECS).
Publikováno v:
Oil & Gas Science and Technology, Vol 48, Iss 1, Pp 43-52 (2006)
The thermal and hydrolytic stability of dibutyl-, diisobutyl- and diisooctyldithiophosphoric acids have been studied in the range of 40-80°C. The reaction progress was followed by the H2S evolution kinetics in volumetric equipment at constant pressu
Externí odkaz:
https://doaj.org/article/064e4cd3c4a644ffaaec038f20c0aab6
Publikováno v:
Ukrainian Journal of Physics; Vol. 58 No. 3 (2013); 260
Український фізичний журнал; Том 58 № 3 (2013); 260
Український фізичний журнал; Том 58 № 3 (2013); 260
Characteristics of GaAs/InxGa1 xAs/GaAs heterostructures with a single quantum well, which were obtained at various growth parameters, are evaluated according to the results of measurements of low-temperature photoluminescence (PL) spectra and their
Autor:
Medvid’, A., Mychko, A., Strilchyk, O., Litovchenko, N., Naseka, Yu., Onufrievs, P., Pludons, A.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2009 607(1):110-111
Autor:
Glinchuk, K. D., Litovchenko, N. M.1, Prokhorovich, A. V.1, Strilchuk, O. N.1 strilchuk@isp.kiev.ua
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2005, Vol. 8 Issue 3, p39-44. 6p.
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2003, Vol. 6 Issue 3, p274-277. 4p.
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Publikováno v:
Semiconductors. May2001, Vol. 35 Issue 5, p516. 4p.
Publikováno v:
Semiconductors. Apr2001, Vol. 35 Issue 4, p384. 7p.