Silicon metal-oxide-semiconductor field-effect transistor with gate structures defined by scanned probe lithography.

Autor: Hagedorn, M. S., Litfin, D. D., Price, G. M., Gordon, A. E., Higman, T. K.

Publikováno v: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1996, Vol. 14 Issue 6, p4153-4156, 4p