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Synthesis of epitaxial monolayer Janus SPtSe

Autor: Sant, R., Gay, M., Marty, A., Lisi, S., Harrabi, R., Vergnaud, C., Dau, M. T., Weng, X., Coraux, J., Gauthier, N., Renault, O., Renaud, G., Jamet, M.

Publikováno v: npj 2D Materials and Applications (2020) 4:41

Janus single-layer transition metal dichalcogenides, in which the two chalcogen layers have a different chemical nature, push chemical composition control beyond what is usually achievable with van der Waals heterostructures. Here we report such a no

Externí odkaz: http://arxiv.org/abs/2009.08706

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Bulk and surface electronic structure of the dual-topology semimetal Pt2HgSe3

Autor: Cucchi, I., Marrazzo, A., Cappelli, E., Ricco, S., Bruno, F. Y., Lisi, S., Hoesch, M., Kim, T. K., Cacho, C., Besnard, C., Giannini, E., Marzari, N., Gibertini, M., Baumberger, F., Tamai, A.

Publikováno v: Phys. Rev. Lett. 124, 106402 (2020)

We report high-resolution angle resolved photoemission measurements on single crystals of Pt2HgSe3 grown by high-pressure synthesis. Our data reveal a gapped Dirac nodal line whose (001)-projection separates the surface Brillouin zone in topological

Externí odkaz: http://arxiv.org/abs/1909.05051

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Interlayer Charge Transfer and Defect Creation in Type I van der Waals Heterostructures

Autor: Nayak, G., Lisi, S., Liu, W-L., Jakubczyk, T., Stepanov, P., Donatini, F., Watanabe, K., Taniguchi, T., Bid, A., Kasprzak, J., Richard, M., Bouchiat, V., Coraux, J., Marty, L., Bendiab, N., Renard, J.

Publikováno v: Phys. Rev. Materials 3, 114001 (2019)

Van der Waals heterostructures give access to a wide variety of new phenomena that emerge thanks to the combination of properties brought in by the constituent layered materials. We show here that owing to an enhanced interaction cross section with e

Externí odkaz: http://arxiv.org/abs/1906.00824

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Electronic band structure of ultimately thin silicon oxide on Ru(0001)

Autor: Kremer, G., Alvarez-Quiceno, J. C., Lisi, S., Pierron, T., Pascual, C. González, Sicot, M., Kierren, B., Malterre, D., Rault, J., Fèvre, P. Le, Bertran, F., Dappe, Y. J., Coraux, J., Pochet, P., Fagot-Revurat, Y.

Publikováno v: ACS Nano 13, pp. 4720-4730 (2019)

Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructure

Externí odkaz: http://arxiv.org/abs/1902.04514

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