Zobrazeno 1 - 10
of 3 627
pro vyhledávání: '"Lisi S."'
Autor:
Annette Tettenborn
Publikováno v:
Schweizerische Zeitschrift für Bildungswissenschaften, Vol 43, Iss 2 (2021)
Externí odkaz:
https://doaj.org/article/77d4972d093e46a89a70c332136b921d
Autor:
Li D; College of Life Information Science & Instrument Engineering, Hangzhou Dianzi University, 115 Wenyi Rd, Hangzhou 310000, China. dujuanli2015@outlook.com., Scarano S; Department of Chemistry 'Ugo Schiff', University of Florence, via della Lastruccia 3⁻13, Sesto Fiorentino, 50019 Firenze, Italy. simona.scarano@unifi.it., Lisi S; Department of Chemistry 'Ugo Schiff', University of Florence, via della Lastruccia 3⁻13, Sesto Fiorentino, 50019 Firenze, Italy. samuele.lisi@outlook.com., Palladino P; Department of Chemistry 'Ugo Schiff', University of Florence, via della Lastruccia 3⁻13, Sesto Fiorentino, 50019 Firenze, Italy. pasquale.palladino@unifi.it., Minunni AM; Department of Chemistry 'Ugo Schiff', University of Florence, via della Lastruccia 3⁻13, Sesto Fiorentino, 50019 Firenze, Italy. maria.minunni@unifi.it.
Publikováno v:
Sensors (Basel, Switzerland) [Sensors (Basel)] 2019 Mar 22; Vol. 19 (6). Date of Electronic Publication: 2019 Mar 22.
Publikováno v:
Sensors, Vol 19, Iss 6, p 1428 (2019)
The authors wish to make the following erratum to this paper [...]
Externí odkaz:
https://doaj.org/article/57cffa09f9594753975b6ef39db24dc8
Autor:
Annette Tettenborn
Publikováno v:
Schweizerische Zeitschrift für Bildungswissenschaften, Vol 43, Iss 2 (2021)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18ea30cad36b5f8639fce1d1be4eb052
https://doi.org/10.24452/10.24452/sjer.43.2.16
https://doi.org/10.24452/10.24452/sjer.43.2.16
Autor:
Sant, R., Gay, M., Marty, A., Lisi, S., Harrabi, R., Vergnaud, C., Dau, M. T., Weng, X., Coraux, J., Gauthier, N., Renault, O., Renaud, G., Jamet, M.
Publikováno v:
npj 2D Materials and Applications (2020) 4:41
Janus single-layer transition metal dichalcogenides, in which the two chalcogen layers have a different chemical nature, push chemical composition control beyond what is usually achievable with van der Waals heterostructures. Here we report such a no
Externí odkaz:
http://arxiv.org/abs/2009.08706
Autor:
Cucchi, I., Marrazzo, A., Cappelli, E., Ricco, S., Bruno, F. Y., Lisi, S., Hoesch, M., Kim, T. K., Cacho, C., Besnard, C., Giannini, E., Marzari, N., Gibertini, M., Baumberger, F., Tamai, A.
Publikováno v:
Phys. Rev. Lett. 124, 106402 (2020)
We report high-resolution angle resolved photoemission measurements on single crystals of Pt2HgSe3 grown by high-pressure synthesis. Our data reveal a gapped Dirac nodal line whose (001)-projection separates the surface Brillouin zone in topological
Externí odkaz:
http://arxiv.org/abs/1909.05051
Autor:
Nayak, G., Lisi, S., Liu, W-L., Jakubczyk, T., Stepanov, P., Donatini, F., Watanabe, K., Taniguchi, T., Bid, A., Kasprzak, J., Richard, M., Bouchiat, V., Coraux, J., Marty, L., Bendiab, N., Renard, J.
Publikováno v:
Phys. Rev. Materials 3, 114001 (2019)
Van der Waals heterostructures give access to a wide variety of new phenomena that emerge thanks to the combination of properties brought in by the constituent layered materials. We show here that owing to an enhanced interaction cross section with e
Externí odkaz:
http://arxiv.org/abs/1906.00824
Autor:
Kremer, G., Alvarez-Quiceno, J. C., Lisi, S., Pierron, T., Pascual, C. González, Sicot, M., Kierren, B., Malterre, D., Rault, J., Fèvre, P. Le, Bertran, F., Dappe, Y. J., Coraux, J., Pochet, P., Fagot-Revurat, Y.
Publikováno v:
ACS Nano 13, pp. 4720-4730 (2019)
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructure
Externí odkaz:
http://arxiv.org/abs/1902.04514
Publikováno v:
LISI S.A. MarketLine Company Profile. 12/19/2017, p1-19. 19p.