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The beta-Si3N4 crystals are widely used in industrial and electronics areas. Therefore, beta-Si3N4 has drawn the attention of researchers for many years. In this study, effects of icosagen group impurity atoms in the IIIA group on the electronic prop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3bf41e7cdee561914d74a9fbdc150b73
https://avesis.gazi.edu.tr/publication/details/653d07e5-640c-4dda-8867-84f29fa2592a/oai
https://avesis.gazi.edu.tr/publication/details/653d07e5-640c-4dda-8867-84f29fa2592a/oai
Autor:
Arslan, Engin, Bütün, Serkan, Lisesivdin, S. Bora, Kasap, Mehmet, Ozcelik, Suleyman, Ozbay, Ekmel
Publikováno v:
Journal of Applied Physics; May2008, Vol. 103 Issue 10, p103701, 7p, 8 Graphs
