Zobrazeno 1 - 10
of 828
pro vyhledávání: '"Lischka, K"'
Autor:
De Greve, K., Clark, S. M., Sleiter, D., Sanaka, K., Ladd, T. D., Panfilova, M., Pawlis, A., Lischka, K., Yamamoto, Y.
Publikováno v:
Appl. Phys. Lett. 97, 241913 (2010)
We report on the optical investigation of single electron spins bound to fluorine donor impurities in ZnSe. Measurements of photon antibunching establish the presence of single, isolated optical emitters, and magneto-optical studies are consistent wi
Externí odkaz:
http://arxiv.org/abs/1009.2268
Excitons bound to flourine atoms in ZnSe have the potential for several quantum optical applications. Examples include optically accessible quantum memories for quantum information processing and lasing without inversion. These applications require t
Externí odkaz:
http://arxiv.org/abs/0712.1048
Ternary and quaternary cubic c-AlxIn1-xN/GaN and c-AlxGayIn1-x-y/GaN heterostructures lattice-matched to c-GaN on freestanding 3C-SiC substrates were grown by plasma-assisted molecular beam epitaxy. The c-AlxGayIn1-x-y alloy permits the independent c
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702363
Publikováno v:
MRS Symp. Proc. Vol. 955E, I8.3 (2007)
Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers consist of a nearly phase-pure zinc blende (cubic) structure with a smal
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702140
Cubic InGaN/GaN multi quantum wells (MQWs) with high structural and optical quality are achieved by utilizing free-standing 3C-SiC (001) substrates and optimizing InGaN quantum well growth. Superlattice peaks up to 5th order are clearly resolved in X
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702100
Publikováno v:
Applied Physics letters, vol. 90, 041918 (2007)
Cubic GaN layers were grown by plasma-assisted molecular beam epitaxy on 3C-SiC (001)substrates. In situ reflection high energy electron diffraction was used to quantitatively determine the Ga coverage of the GaN surface during growth. Using the inte
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702018
Autor:
Makino, T., Andre, R., Gerard, J. -M., Romestain, R., Dang, Le Si, Bartels, M., Lischka, K., Schikora, D.
Publikováno v:
Physica E, 17C (2003) p. 97--98.
In this work, we have investigated the optical properties of two samples of CdSe quantum dots by using submicro-photoluminescence spectroscopy. The effect of vicinal-surface GaAs substrates on their properties has been also assessed. The thinner samp
Externí odkaz:
http://arxiv.org/abs/cond-mat/0211307
Publikováno v:
In Current Applied Physics September 2014 14(9):1234-1239
Publikováno v:
In Journal of Crystal Growth 15 May 2011 323(1):286-289
Publikováno v:
In Journal of Crystal Growth 15 May 2011 323(1):88-90