Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Lisa Y.S. Pang"'
Gold is expected to form a relatively low barrier on hydrogenated thin film diamond, and this metallisation has therefore been widely used as the ‘ohmic’ contact for electronic devices fabricated using this material. However, gold contacts are no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2909e60eb486be2521d074f4dcce75c
https://doi.org/10.1016/s0925-9635(00)00240-5
https://doi.org/10.1016/s0925-9635(00)00240-5
Autor:
John S. Foord, Hui Jin Looi, F.H. Jones, Richard B. Jackman, Andrew B. Molloy, Lisa Y.S. Pang, Michael D. Whitfield
It has been known for some time that hydrogen within the bulk of diamond increases the conductivity of the material. However, only recently did it become apparent that the surface of thin film diamond can display p-type conductivity and that this too
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::291a29cf9b3efacf89ebf1e39725783c
https://ora.ox.ac.uk/objects/uuid:3654aac1-c38f-42c5-bdbd-7cb6ff473b3a
https://ora.ox.ac.uk/objects/uuid:3654aac1-c38f-42c5-bdbd-7cb6ff473b3a
Publikováno v:
Carbon. 37:817-822
Early predictions that diamond would be a suitable material for high-performance high-power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin-film material. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::309eec046a600e50ada174a05983a8e6
https://doi.org/10.1016/s0008-6223(98)00277-2
https://doi.org/10.1016/s0008-6223(98)00277-2
Publikováno v:
Scopus-Elsevier
Early predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a3b1c396e3aebfee45898e608dea1a8
https://doi.org/10.1016/s0925-9635(98)00419-1
https://doi.org/10.1016/s0925-9635(98)00419-1
Publikováno v:
Scopus-Elsevier
Diamond containing hydrogen at or near the surface displays p-type conductivity. The origin of this effect has been controversial. We have used I-V, Hall effect, SIMS, Raman, UPS and XPS to study hydrogenated polycrystalline CVD diamond films. The di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e57ec0e8601636262fe1c0b1bba107f
https://doi.org/10.1016/s0925-9635(97)00252-5
https://doi.org/10.1016/s0925-9635(97)00252-5
Publikováno v:
Materials Science and Engineering: B. 46:124-128
bstract A high temperature depletion-mode metal-insulator field effect transistor (MISFET) has been fabricated from thin film polycrystalline diamond with a p-type (boron doped) channel and an insulating diamond gate. This device was successfully ope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c34f7da7677c7e2ebc40fd80a26dd2d4
https://doi.org/10.1016/s0921-5107(96)01946-0
https://doi.org/10.1016/s0921-5107(96)01946-0
Publikováno v:
Diamond and Related Materials. 5:829-834
Silicon-supported and free-standing thin films of diamond have been used to fabricate photoconductive and photodiode structures for the detection of UV light. On free-standing (80 μm thick) material, a planar interdigitated design with 20-μm electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8eda83d229c26ae39e8bf574e4d1277
https://doi.org/10.1016/0925-9635(95)00419-x
https://doi.org/10.1016/0925-9635(95)00419-x
Publikováno v:
Applied Physics Letters. 70:339-341
A depletion-mode metal-insulator-semiconductor field-effect transistor has been fabricated from thin film polycrystalline diamond with a p-type (boron doped) channel and an insulating diamond gate. This device has been successfully operated at 300 °
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2a55e2fe27f829e72423651b643f77a
https://doi.org/10.1063/1.118408
https://doi.org/10.1063/1.118408
Publikováno v:
SOLID-STATE ELECTRONICS. 42(12)
Early predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::170e0d07b4167185a9afcc991101efb1
http://ora.ox.ac.uk/objects/uuid:65393e87-2416-49c0-89cf-a26fc24c4c97
http://ora.ox.ac.uk/objects/uuid:65393e87-2416-49c0-89cf-a26fc24c4c97
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