OMVPE growth of AlInAs and device quality AlInAs-based heterostructures

Autor: Lisa Stecker, Leye Aina, Eric A. Martin, Mike Mattingly, Tom Loughran, Ayub Fathimulla

Publikováno v: Journal of Crystal Growth. 93:911-918

High-quality AlInAs exhibiting excellent photoluminescence and having residual electron concentrations as low as 7×10 15 cm −3 with electron mobilities as high as 1900 cm 2 /V·s has been grown by OMVPE. AlInAs/InP heterostructures are shown to be

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::47613783acdc9c436c210972bbbd9e64
https://doi.org/10.1016/0022-0248(88)90639-2

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Characteristics improvement and carrier transportation of CeO2 gate dielectrics with rapid thermal annealing.

Autor: Jer Chyi Wang, Kuo Cheng Chiang, Tan Fu Lei, Chung Len Lee

Publikováno v: Proceedings of the 11th International Symposium on the Physical & Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743); 2004, p161-164, 4p

Integration Processes and Properties of Pt/Pb5Ge3O11/(Zr, Hf)O2/Si One Transistor Memory Devices.

Autor: Li, Tingkai, Hsu, Sheng Teng, Ulrich, Bruce, Stecker, Lisa

Publikováno v: MRS Online Proceedings Library; 2001, Vol. 688 Issue 1, p1-6, 6p

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Autor: Maa, Jer-shen, Tweet, Douglas J., Ono, Yoshi, Stecker, Lisa, Hsu, Sheng Teng

Publikováno v: MRS Online Proceedings Library; 2001, Vol. 670 Issue 1, p1-6, 6p