Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Lisa M. Porter"'
Autor:
Jingyu Tang, Kunyao Jiang, Chengchao Xu, Matthew J. Cabral, Kelly Xiao, Lisa M. Porter, Robert F. Davis
Publikováno v:
APL Materials, Vol 12, Iss 1, Pp 011109-011109-12 (2024)
Nominally phase-pure γ-Ga2O3 was deposited on (100) MgAl2O4 within a narrow temperature window centered at ∼470 °C using metal-organic chemical vapor deposition. The film deposited at 440 °C exhibited either poor crystallization or an amorphous
Externí odkaz:
https://doaj.org/article/72c9617482a64f2393a7ca7efd582195
Autor:
Yao Yao, Serdal Okur, Luke A. M. Lyle, Gary S. Tompa, Tom Salagaj, Nick Sbrockey, Robert F. Davis, Lisa M. Porter
Publikováno v:
Materials Research Letters, Vol 6, Iss 5, Pp 268-275 (2018)
Heteroepitaxial films of Ga $ _2 $ O $ _3 $ were grown on c-plane sapphire (0001). The stable phase β-Ga $ _2 $ O $ _3 $ was grown using the metalorganic chemical vapor deposition technique, regardless of precursor flow rates, at temperatures betwee
Externí odkaz:
https://doaj.org/article/badb4c85ab714251b12d5746f9a576b0
Autor:
Elizabeth V. Favela, Kun Zhang, Matthew J. Cabral, Alice Ho, Sun Ho Kim, Kalyan K. Das, Lisa M. Porter
Publikováno v:
Journal of Electronic Materials. 52:1927-1936
Publikováno v:
ACS Applied Electronic Materials. 4:4471-4481
Autor:
Elizabeth V. Favela, Hyung Min Jeon, Kevin D. Leedy, Kun Zhang, Szu-Wei Tung, Francelia Sanchez Escobar, C. V. Ramana, Lisa M. Porter
Publikováno v:
Journal of Vacuum Science & Technology B. 41
Thin (40–150 nm), highly doped n+ (1019–1020 cm−3) Ga2O3 layers deposited using pulsed laser deposition (PLD) were incorporated into Ti/Au ohmic contacts on (001) and (010) β-Ga2O3 substrates with carrier concentrations between 2.5 and 5.1 ×
Autor:
Lisa M. Porter, Shelly J. Lane, Barbara B. Demchick, Jane K. Sweeney, Pamela A. Mullens, Breanne E. Kearney
Publikováno v:
The American Journal of Occupational Therapy. 77
Importance: Parent training is an essential part of occupational therapy intervention for children with sensory processing and sensory integration (SP–SI) challenges, and parents’ learning needs should be considered.Objective: To identify the ext
Autor:
Elizabeth V. Favela, Tianxiang Lin, Kalyan K. Das, Zbigniew Galazka, G. Wagner, Kunyao Jiang, Lisa M. Porter, Diamond Moody, Luke A. M. Lyle, Andreas Popp
Publikováno v:
ECS Transactions. 92:71-78
In this study, electrical properties of four metals (W, Mo, Au, Ni) as Schottky contacts on n-type (100)-oriented β-Ga2O3 substrates grown by the Czochralski method are reported. The Schottky barrier heights for each metal contact were calculated fr
Autor:
Kunyao Jiang, Jingyu Tang, Matthew J. Cabral, Anna Park, Liuxin Gu, Robert F. Davis, Lisa M. Porter
Publikováno v:
Journal of Applied Physics. 131:055305
Publikováno v:
Gallium Oxide ISBN: 9783030371524
This chapter reviews the heteroepitaxial growth of \(\upalpha \)- , \(\upbeta \)- , and \(\upvarepsilon \)-gallium oxide (Ga\(_2\)O\(_3\)) films, with a focus on those grown using the metalorganic chemical vapor deposition (MOCVD) technique. Variatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd1734287df7aa61ab85733b388b9569
https://doi.org/10.1007/978-3-030-37153-1_9
https://doi.org/10.1007/978-3-030-37153-1_9
Autor:
Swarnav Mukhopadhyay, Luke A. M. Lyle, Hridibrata Pal, Kalyan K. Das, Lisa M. Porter, Biplab Sarkar
Publikováno v:
Journal of Applied Physics. 131:025702