Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Lisa Liborius"'
Autor:
Juliane Koch, Lisa Liborius, Peter Kleinschmidt, Werner Prost, Nils Weimann, Thomas Hannappel
Publikováno v:
ACS Omega, Vol 9, Iss 5, Pp 5788-5797 (2024)
Externí odkaz:
https://doaj.org/article/31b601f275574e2e93637bf946e84574
Autor:
Maximilian Zapf, Maurizio Ritzer, Lisa Liborius, Andreas Johannes, Martin Hafermann, Sven Schönherr, Jaime Segura-Ruiz, Gema Martínez-Criado, Werner Prost, Carsten Ronning
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Designing efficient nanowire chip-based electrical and optical devices remains a challenge. Here, the authors present an axial p-n junction GaAs nanowire X-ray detector that enables achieving a spatial resolution of 200 nm; probing the internal elect
Externí odkaz:
https://doaj.org/article/76e0867c35524acb9df7216ffe5817c9
Autor:
Juliane Koch, Lisa Liborius, Peter Kleinschmidt, Nils Weimann, Werner Prost, Thomas Hannappel
Publikováno v:
Advanced Materials Interfaces. 9:2270168
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c214e33efab2d8af6ee8ed6d2298f01
https://doi.org/10.1002/admi.202270168
https://doi.org/10.1002/admi.202270168
Tunneling-Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors
Autor:
Jan Bieniek, Lisa Liborius, Franz-Josef Tegude, Werner Prost, A. Poloczek, Alexander Possberg, Nils Weimann
Herein, a detailed analysis of leakage mechanisms in epitaxially grown nanowire heterojunction bipolar transistors (NW-HBTs) is presented. Coaxial npn-GaAs/InGaP core–multishell nanowires are grown via gold-catalyzed metalorganic vapor phase epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6648768c8dc040e6a9906752ec3960b
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85090945767
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85090945767
Autor:
A. Poloczek, J. Ackermann, Werner Prost, Franz-Josef Tegude, Nils Weimann, Christian Blumberg, Lisa Liborius
We present Au catalyzed p-GaAs nanowire growth on n-GaN layers as a possible method to grow an arsenide on a nitride compound semiconductor by metal organic vapor phase epitaxy. The GaAs growth position, the nanowire density and the nanowire growth d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::36eb8234a3d9e5ea68178a25764ba4e2
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85079742349
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85079742349
Publikováno v:
Journal of Crystal Growth. :126162
In this paper, we present a comprehensive study of position-defined Al-polar AlN nucleation on lithographically patterned Si(1 1 1) substrates as a method to obtain ordered Ga-polar GaN nanowire arrays, with possible application in future nanowire-ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9da3251c1c5d8065d61e54e536de516
https://doi.org/10.1016/j.jcrysgro.2021.126162
https://doi.org/10.1016/j.jcrysgro.2021.126162
Publikováno v:
2019 Compound Semiconductor Week (CSW).
We report on the characterization of n-doped InGaP nanowire shells in GaAs/InGaP core-multishell nanowires grown by metal organic vapor phase epitaxy. Multi-tip scanning tunneling microscopy allowed for contact independent resistance profiling of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c746459ec7c615c612285fc4a2c34a6f
https://doi.org/10.1109/iciprm.2019.8819134
https://doi.org/10.1109/iciprm.2019.8819134
Autor:
Franz-Josef Tegude, Siegfried R. Waldvogel, Claudia Speich, Werner Prost, Ulrich Hagemann, Lisa Liborius, Frank Dissinger
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e7ecd7ea50fdcdf042d552d7b75448f
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85062972840
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85062972840
Autor:
Werner Prost, Andreas Nägelein, Nils Weimann, Thomas Hannappel, A. Poloczek, Franz-Josef Tegude, Jan Bieniek, Lisa Liborius
Publikováno v:
physica status solidi (b). 257:1900358
Herein, the characterization of n-doped InGaP:Si shells in coaxial not-intentionally doped (nid)-GaAs/n-InGaP as well as n–p–n core–multishell nanowires grown by metalorganic vapor-phase epitaxy is reported. The multi-tip scanning tunneling mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bf5d1b9bdc7f77367cab7b38ef60116a
https://doi.org/10.1002/pssb.201900358
https://doi.org/10.1002/pssb.201900358
Autor:
Lisa Liborius, Khaled Arzi, Nils Weimann, Claudia Speich, A. Poloczek, Werner Prost, Fabian Heyer, Franz-Josef Tegude
Publikováno v:
physica status solidi (a). :1800562
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f51e6482835e013380ad3c1565f08e0c
https://doi.org/10.1002/pssa.201800562
https://doi.org/10.1002/pssa.201800562