Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Lisa H. Stecker"'
Autor:
Lisa H. Stecker, Kurt Ulmer, Vivek Subramanian, Rungrot Kitsomboonloha, Jaewon Jang, Gerd Grau, Hongki Kang
Publikováno v:
Organic Electronics. 15:3639-3647
High performance organic thin-film transistors and inverters operating at MHz frequencies at 10 V are fabricated on plastic with high throughput (printing speed up to 1.0 m/s) using attoliter-scale high-speed gravure printing. The high performance of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1194b3d071856c7884e352b10a92926
https://doi.org/10.1016/j.orgel.2014.10.005
https://doi.org/10.1016/j.orgel.2014.10.005
Publikováno v:
Journal of Electronic Materials. 35:795-802
Directed assembly and integration of ZnO nanobridges (NBs) into working devices on Si substrates was achieved. Metal catalysts were not used, and the “harvest and disperse” method of nanorod (NR) integration was avoided. High-quality ZnO NRs were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a0a64097a8989b2ecad6e666cb86812
https://doi.org/10.1007/s11664-006-0139-4
https://doi.org/10.1007/s11664-006-0139-4
Publikováno v:
Nanotechnology. 16:292-296
We demonstrate selective growth of vertically aligned ZnO nanowires on a (100) Si substrate using a patterned thin film ZnO seed layer. Metal catalysts, which can be a source of contamination, were not used. A single-crystalline structure with c-axis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a2c410442d88b507a201eb8c2be1685
https://doi.org/10.1088/0957-4484/16/2/020
https://doi.org/10.1088/0957-4484/16/2/020
Publikováno v:
Japanese Journal of Applied Physics. 41:6890-6894
We have fabricated Pb5Ge3O11 (PGO) MFMPOS (M: metal, F: ferroelectrics, P: polysilicon, O: oxide, S: silicon) memory transistor devices using metal organic chemical vapor deposition (MOCVD) selective deposition, damascene structure and chemical mecha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1771ccb5929167287d1437e72a11cff
https://doi.org/10.1143/jjap.41.6890
https://doi.org/10.1143/jjap.41.6890
Autor:
Jer-shen Maa, Bruce D. Ulrich, Dave Evans, Hong Ying, Lisa H. Stecker, Fengyan Zhang, Wei-Wei Zhuang, Yoshi Ono, Sheng Teng Hsu
Publikováno v:
Integrated Ferroelectrics. 40:145-154
The first MFIS FETs PMOS using Pt/Pb5Ge3O11/ZrO2/n-Si structure has been successfully fabricated. The PGO thin film was deposited by spin on method. Single phase PGO with strong c-axis orientation and low leakage current was obtained on ZrO2 substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d9df0b123bfd96c4e1229a68391c835
https://doi.org/10.1080/10584580108010837
https://doi.org/10.1080/10584580108010837
Publikováno v:
Integrated Ferroelectrics. 37:21-28
Integration processes for one transistor memory device have been optimized to reduce process-induced damages. One-transistor ferroelectric memory devices with MOCVD Pb5Ge3O11 (PGO) MFMOS memory cells have been fabricated. The hysteresis loop of a 300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47ef283eace0e56b16d83e64c6dfa1c5
https://doi.org/10.1080/10584580108015661
https://doi.org/10.1080/10584580108015661
Publikováno v:
MRS Proceedings. 1402
Optimization of the interface between the organic semiconductor (OSC) & the source-drain (S/D) electrode is critical in order to improve organic thin film transistor (OTFT) device performance. This process typically involves coating the metal S/D ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ace12d5bc0ff3d34e6ebafc68ad0ac5
https://doi.org/10.1557/opl.2012.189
https://doi.org/10.1557/opl.2012.189
Publikováno v:
IEEE Electron Device Letters. 23:339-341
One transistor ferroelectric nonvolatile memory with gate stack of Pt/Pb/sub 5/Ge/sub 3/O/sub 11//lr/poly-Si/SiO/sub 2//Si was successfully fabricated. This device features a saturated memory window of 3 V at a programming voltage of higher than 3 V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86a67f1a608bb0bc9f8649b24a584acb
https://doi.org/10.1109/led.2002.1004228
https://doi.org/10.1109/led.2002.1004228
Autor:
Yoshi Ono, Tingkai Li, Jong-Jan Lee, Hong Ying, Dave Evans, Lisa H. Stecker, Jer-shen Maa, Bruce D. Ulrich, Sheng Teng Hsu
Publikováno v:
Applied Physics Letters. 79:1661-1663
A Pb5Ge3O11 metal–ferroelectric–metal–oxide–silicon memory transistor has been fabricated. The device showed a memory window of about 2 V. The memory window was almost saturated at the operation voltage of 2 V. The “off” state drain curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c69fabcca703b65aa80ea5c89972ff6
https://doi.org/10.1063/1.1401092
https://doi.org/10.1063/1.1401092
Publikováno v:
IEEE International Integrated Reliability Workshop Final Report, 2002..
We have begun an investigation of the electrical properties of thin film HfO/sub 2/ deposited via atomic layer deposition (ALD) using Hf(NO/sub 3/)/sub 4/ and H/sub 2/O as precursors. Excellent uniformity was achieved on H-terminated Si with better t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::030781f95d8dab1d35af4a73fad2e80b
https://doi.org/10.1109/irws.2002.1194244
https://doi.org/10.1109/irws.2002.1194244