Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Lisa E. Benatar"'
Publikováno v:
Journal of Applied Physics. 79:1926-1934
Measurements of defect density, photoconductivity, and dark conductivity are used to obtain information about the values of the electron capture cross sections of charged and neutral metastable dangling‐bond defects in high‐quality, undoped, hydr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0811b26efc06904d3700ebbe646b33e
https://doi.org/10.1063/1.361082
https://doi.org/10.1063/1.361082
Publikováno v:
Journal of Non-Crystalline Solids. 169:47-53
During optical degradation and anneal of hydrogenated amorphous silicon, it is often observed that the photoconductivity changes by a larger factor and/or with a different dependence on time than the density of dangling bond defects measured by the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d817b3ee854d8758d5b1eafdfd4190c
https://doi.org/10.1016/0022-3093(94)90223-2
https://doi.org/10.1016/0022-3093(94)90223-2
Publikováno v:
Journal of Applied Physics. 75:1571-1576
This paper reports an empirically based correlation between the metastable defect density and the value and temperature dependence of the Fermi energy in undoped hydrogenated amorphous silicon. According to this correlation, to specify two of the thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96c44de656f00aa49adcd0cf221e5e3d
https://doi.org/10.1063/1.356393
https://doi.org/10.1063/1.356393
Publikováno v:
Journal of Applied Physics. 73:8659-8661
At least three quantities have been referred to as ‘‘activation energies’’ in association with fits to metastable defect kinetics in hydrogenated amorphous silicon. Most commonly cited is Eτ, the activation energy determined from stretched
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d98d2901781e561ca7d71e447c6dc19b
https://doi.org/10.1063/1.353378
https://doi.org/10.1063/1.353378
Autor:
A. Lopez-Otero, David Redfield, M. Grimbergen, Alan L. Fahrenbruch, Richard H. Bube, Lisa E. Benatar
Publikováno v:
MRS Proceedings. 258
Data are presented here that show the effects of temperature on the kinetics of metastable defect formation in undoped a-Si:H over the range 45°-110°C. CPM (Constant Photocurrent Method), photoconductivity, and dark conductivity measurements were m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8903f75c8681c28a87a143c1ebcd333
https://doi.org/10.1557/proc-258-461
https://doi.org/10.1557/proc-258-461
Autor:
A. Lopez-Otero, Richard L. McConville, Richard H. Bube, M. Grimbergen, Alan L. Fahrenbruch, David Redfield, Lisa E. Benatar
Publikováno v:
MRS Proceedings. 258
Generation, saturation, and annealing characteristics of metastable defects formed by electron beam irradiation at 20 keV and photon irradiation at 1.9 eV have been compared. Saturation density reached by electron irradiation is temperature independe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a7a15f9453b03f033d2f150f795b24c
https://doi.org/10.1557/proc-258-443
https://doi.org/10.1557/proc-258-443
Autor:
David Redfield, A. L. Fahrenbruch, M. Grimbergen, A. Lopez‐Otero, R. H. Bube, Lisa E. Benatar
Publikováno v:
AIP Conference Proceedings.
Defect density as a function of light exposure time and the value of the saturation defect density in undoped hydrogenated amorphous silicon (a‐Si:H) have been measured. We varied conditions of temperature and light intensity to test the prediction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f89aaab12f5b863f127b1e3a35eb1516
https://doi.org/10.1063/1.41021
https://doi.org/10.1063/1.41021
Publikováno v:
MRS Proceedings. 219
The effects of excitation rate and temperature on the kinetics and steady-state behavior of metastable defect formation in hydrogenated amorphous silicon (a-Si:H) have been studied. The dependences on temperature of the lifetime, τ, and stretching p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76bf7968f04d02684198ce4bd2483fd2
https://doi.org/10.1557/proc-219-117
https://doi.org/10.1557/proc-219-117