Random Telegraph Signal Phenomena in Ultra Shallow p+n Silicon Avalanche Diodes

Autor: Vishal Agarwal, Anne-Johan Annema, Satadal Dutta, Raymond J. E. Hueting, Lis K. Nanver, Bram Nauta

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 6, Pp 642-652 (2018)

An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the �

Externí odkaz: https://doaj.org/article/25a7d66dc53445009c8419929243de6b

Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting

Autor: Lis K. Nanver, Max Krakers, Tihomir Knežević

Publikováno v: Krakers, M, Knežević, T & Nanver, L K 2021, ' Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting ', Journal of Electronic Materials, vol. 50, no. 12, pp. 7026-7036 . https://doi.org/10.1007/s11664-021-09233-8
Journal of electronic materials, 50(12), 7026-7036. Springer

An anomalous aluminum-mediated material transport process was investigated in sets of Ge-on-Si photodiodes with broadband optoelectrical characteristics measured at wavelengths from 255 nm to 1550 nm. The diodes had “PureGaB” anode regions fabric

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5c94ddfbd7530f635da0997cb90e845b
http://www.scopus.com/inward/record.url?scp=85116406780&partnerID=8YFLogxK

Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si

Autor: D. Thammaiah Shivakumar, Tihomir Knežević, Lis K. Nanver

Publikováno v: Shivakumar, D T, Knežević, T & Nanver, L K 2021, ' Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si ', Journal of Materials Science: Materials in Electronics, vol. 32, no. 6, pp. 7123-7135 . https://doi.org/10.1007/s10854-021-05422-7
Journal of Materials Science: Materials in Electronics, 32(6), 7123-7135. Springer

Metallization layers of aluminum, gold, or copper are shown to be protected from interactions with silicon substrates by thin boron layers grown by chemical-vapor deposition (CVD) at 450 °C. A 3-nm-thick B-layer was studied in detail. It formed the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58892b58c680f53128507fd0539cd3ac
https://doi.org/10.1007/s10854-021-05422-7

Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Autor: Erwin Hardeveld, Tomislav Suligoj, Xingyu Liu, Lis K. Nanver, Tihomir Knezevic

Publikováno v: IEEE electron device letters, 40(6):8686173, 858-861. IEEE

A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6372318a1550437214f8376f13699cc5
https://doi.org/10.1109/led.2019.2910465

PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility

Autor: Antonius A.I. Aarnink, Shivakumar D. Thammaiah, Kevin M. Batenburg, Lis K. Nanver, Tihomir Knežević, Xingyu Liu

Publikováno v: Thammaiah, S, Liu, X, Knežević, T, M. Batenburg, K, Aarnink, A A I & Nanver, L K 2021, ' PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility ', Elsevier, vol. 177, 107938 . https://doi.org/10.1016/j.sse.2020.107938
Solid-state electronics, 177:107938. Elsevier

Several methods of depositing pure boron (PureB) layers on silicon are examined with respect to their potential for fabricating advanced PureB (photo)diodes with back-end-of-line (BEOL) CMOS compatibility. PureB devices were fabricated in two differe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a80d319c46866c4d5dbb7e326b9be20e
https://vbn.aau.dk/da/publications/e17ea48b-ea95-4ab9-86b5-fb2e1eec0729