Zobrazeno 1 - 10
of 960
pro vyhledávání: '"Lis K"'
Autor:
Lene T. Hansen, Johannes Riis, Kristian H. Kragholm, Lis K. Larsen, Christian Cavallius, Marianne M. Mørch, Silas Z. Clemmensen, Maria L. Krogager, Dorte Melgaard
Publikováno v:
BMC Geriatrics, Vol 23, Iss 1, Pp 1-6 (2023)
Abstract Background Anaemia is common following hip fracture in ortho-geriatric patients and is associated with postoperative infections.. This study investigated whether intravenous iron supplements reduced the rate of postoperative infections withi
Externí odkaz:
https://doaj.org/article/e5b659aabd3f4da99b00c8e271009458
Autor:
Karen Brage, Kristina T.T. Pank, Sisse Hansen, Lis K. Sondergaard, Mark F. McEntee, Malene Roland V. Pedersen
Publikováno v:
WFUMB Ultrasound Open, Vol 1, Iss 1, Pp 100005- (2023)
Introduction: In general, there is a lack of technical quality assurance (TQA) in ultrasound, which threatens patients. This study aimed to map the level of ultrasound quality assurance in Danish Radiology Departments, assess the intra- and interrate
Externí odkaz:
https://doaj.org/article/42a3e952340a4b0bb873b548957ca6df
Autor:
Vishal Agarwal, Anne-Johan Annema, Satadal Dutta, Raymond J. E. Hueting, Lis K. Nanver, Bram Nauta
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 642-652 (2018)
An extensive time domain analysis of the random telegraph signal (RTS) phenomena in silicon avalanche diodes is presented. Experiments show two distinct types of RTSs classified herein, on the basis of the temporal behavior of the amplitude, as the
Externí odkaz:
https://doaj.org/article/25a7d66dc53445009c8419929243de6b
Autor:
Jaber Derakhshandeh, Negin Golshani, Wiebe de Boer, Tom L. M. Scholtes, Agata Sakic, Lis K. Nanver
Publikováno v:
Materials, Vol 4, Iss 12, Pp 2092-2107 (2011)
An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controll
Externí odkaz:
https://doaj.org/article/cb4ab7ad6dd240d7b80e19e96b637956
Publikováno v:
Photonics, Vol 3, Iss 4, p 54 (2016)
Junction formation in deep trenches is proposed as a new means of creating a built-in drift field in silicon drift detectors (SDDs). The potential performance of this trenched drift detector (TDD) was investigated analytically and through simulations
Externí odkaz:
https://doaj.org/article/f7d9bfdff55d4fb8878046988b392ee2
Akademický článek
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Autor:
Brage, Karen, Pank, Kristina T.T., Hansen, Sisse, Sondergaard, Lis K., McEntee, Mark F., Pedersen, Malene Roland V.
Publikováno v:
In WFUMB Ultrasound Open June 2023 1(1)
Akademický článek
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Publikováno v:
In Solid State Electronics December 2021 186
Autor:
Thammaiah, Shivakumar D., Liu, Xingyu, Knežević, Tihomir, Batenburg, Kevin M., Aarnink, A.A.I., Nanver, Lis K.
Publikováno v:
In Solid State Electronics March 2021 177