Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Lira Hwang"'
Publikováno v:
Sensors and Actuators B: Chemical. 372:132616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecd1cae9358545cd308ade210ad9a926
https://doi.org/10.1016/j.snb.2022.132616
https://doi.org/10.1016/j.snb.2022.132616
Autor:
Dong-Hoon Kim, Sang-chul Shin, Hyung-Nyung Park, Jungdong Kim, Jongwoo Park, Haebum Lee, In-Taek Ku, Kidan Bae, Hye-Jin Kim, Lira Hwang, Sangwoo Pae
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
Display Driver IC is used to operate the display panel of mobile devices, such as handheld smartphones and tablets. Low power consumption becomes very important in mobile segments, thus High-k (HK)/ metal-gate (MG) process was used to fabricate DDI p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73b078df310bb8e315f8b8d4ac315c1e
https://doi.org/10.1109/irps.2016.7574584
https://doi.org/10.1109/irps.2016.7574584
Autor:
Sungmock Ha, Jongwoo Park, Hye-Jin Kim, Hyun-Jin Kim, Jinju Kim, Yoohwan Kim, Lira Hwang, Seungjin Choo, Minjung Jin, Changze Liu, Soonyoung Lee, Hyun Chul Sagong, Junekyun Park, Jungin Kim, Sungyoung Yoon, Sangwoo Pae, Kangjung Kim, Hyeonwoo Nam
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
Aging induced variability has been shaving away the design margins in advanced SRAM which may become more serious with highly scaled process node. This paper provides a systematical study of the BTI variation impacts in FinFET SRAM based on 14nm 128M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63dee6b834292e8680c78abc22023b7d
https://doi.org/10.1109/iedm.2015.7409675
https://doi.org/10.1109/iedm.2015.7409675
Autor:
Jinchul Heo, Ilchan Bae, Chul-Hee Jeon, Kidan Bae, Junekyun Park, Hajin Lim, Dongseok Shin, Jong-Ho Lee, Minjung Jin, Jinho Do, Lira Hwang, Jongwoo Park
Publikováno v:
2011 International Reliability Physics Symposium.
The propensity of HCI and BTI degradation of HfSiON MOSFET on strained SiN-CESL performance booster is meticulously investigated. It is found that HCI and BTI lifetime of HfO based n/p MOSFET devices depend on hydrogen, initial Dit and plasma chargin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1afb17a7539cddd111170ec1923bc4d6
https://doi.org/10.1109/irps.2011.5784592
https://doi.org/10.1109/irps.2011.5784592
Autor:
Hyun-Jin Kim, Jungin Kim, Minjung Jin, Jongwoo Park, Kidan Bae, Lira Hwang, Kyong Taek Lee, Junekyun Park, Jongik Nam
Publikováno v:
2011 International Reliability Physics Symposium.
The TDDB failure mechanism of high-k dielectric/metal gate (HK/MG) CMOSFETs on DC and AC stress conditions are investigated in comparison to poly-Si/SiON. All devices under unipolar AC stress exhibit longer failure time (t bd ) as frequency increases
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d357d7177c32de222b2d0f4ea3c8b674
https://doi.org/10.1109/irps.2011.5784445
https://doi.org/10.1109/irps.2011.5784445
Autor:
Kidan Bae, Minjung Jin, Hajin Lim, Lira Hwang, Dongseok Shin, Junekyun Park, Jinchul Heo, Jongho Lee, Jinho Do, Ilchan Bae, Chulhee Jeon, Jongwoo Park
Publikováno v:
2011 IEEE International Reliability Physics Symposium (IRPS); 2011, pPL.1.1-PL.1.5, 1p
Autor:
Kyong Taek Lee, Jongik Nam, Minjung Jin, Kidan Bae, Junekyun Park, Lira Hwang, Jungin Kim, Hyunjin Kim, Jongwoo Park
Publikováno v:
2011 IEEE International Reliability Physics Symposium (IRPS); 2011, p2A.3.1-2A.3.5, 1p