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pro vyhledávání: '"Liqun Q. Shi"'
Publikováno v:
Journal of the American Ceramic Society. 98:4050-4057
The radiation damage response of Ti3SiC2 heated from 120°C to 850°C during 700 keV Si+ irradiation has been investigated. The samples were analyzed using glancing incidence X-ray diffraction, Rutherford backscattering spectrometry, Raman spectrosco