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Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3

Autor: Shu, G. J., Liou, S. C., Karna, S. K., Sankar, R., Hayashi, M., Chou, F. C.

Layered narrow band gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling (SOC), which has been identified both as a good candidate of thermoelectric material of high thermoelectric figure-of-merit (ZT) and a topolo

Externí odkaz: http://arxiv.org/abs/1804.00845

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Graphene-like conjugated pi-bond system in Pb1-xSnxSe

Autor: Shu, G. J., Liou, S. C., Karna, S., Sankar, R., Hayashi, M., Chu, M. -W., Chou, F. C.

Following the identification of the pi bond in graphene, in this work, a pi bond constructed through side-to-side overlap of half-filled 6pz orbitals was observed in a non-carbon crystal of Pb1-xSnxSe (x=0.34) (PSS), a prototype topological crystalli

Externí odkaz: http://arxiv.org/abs/1503.06946

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{\pi}-Plasmon Dispersion in Free-Standing Graphene by Momentum-Resolved Electron Energy-Loss Spectroscopy

Autor: Liou, S. C., Shie, C. -S., Chen, C. H., Breitwieser, R., Pai, W. W., Guo, G. Y., Chu, M. -W.

The {\pi}-plasmon dispersion in graphene was scrutinized by momentum(q)-resolved electron energy-loss spectroscopy with an improved q resolution and found to display the square root of q dispersion characteristic of the collective excitation of two-d

Externí odkaz: http://arxiv.org/abs/1412.8538

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pi-bonds in graphene and surface of topological insulator Bi2Se3

Autor: Shu, G. J., Liou, S. C., Chou, F. C.

Chemical bond analysis for the topological insulator (TI) Bi2Se3 following valence bond theory and VSEPR rule is proposed and compared to that of graphene. The existence of pi-bond trimers on surface Se-layer is revealed to be responsible for the unu

Externí odkaz: http://arxiv.org/abs/1307.2078

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Plasmons dispersion and nonvertical interband transitions in single-crystal Bi2Se3 investigated by electron energy loss spectroscopy

Autor: Liou, S. C., Chu, M. -W., Sankar, R., Huang, F. -T., Shu, G. -J., Chou, F. C., Chen, C. H.

Plasmons dispersion and nonvertical interband transitions in Bi2Se3 single crystals were investigated by electron energy-loss spectroscopy in conjunction with (scanning) transmission electron microscopy, (S)TEM-EELS. Both volume plasmons ({\pi} plasm

Externí odkaz: http://arxiv.org/abs/1301.0378

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Nonstoichiometric doping and Bi antisite defect in single crystal Bi2Se3

Autor: Huang, F. -T., Chu, M. -W., Kung, H. H., Lee, W. L., Sankar, R., Liou, S. -C., Wu, K. K., Kuo, Y. K., Chou, F. C.

Publikováno v: Physical Review B Rapid Communications, 2012

We studied the defects of Bi2Se3 generated from Bridgman growth of stoichiometric and nonstoichiometric self-fluxes. Growth habit, lattice size, and transport properties are strongly affected by the types of defect generated. Major defect types of Bi

Externí odkaz: http://arxiv.org/abs/1208.1568

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