Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Lior Gal"'
Autor:
Vissarion Mikhelashvili, Lior Gal, Guy Seri, Sven Bauer, Igor Khanonkin, Ori Eyal, Amnon Willinger, Johann Reithmaier, Gadi Eisenstein
Publikováno v:
Nanophotonics.
We present a comprehensive study of the temperature dependent electronic and optoelectronic properties of a tunnelling injection quantum dot laser. The optical power-voltage (P opt–V) characteristics are shown to be correlated with the current-volt
Autor:
Johann Peter Reithmaier, Alon Hoffman, Miri Fischer, Shaul Michaelson, Mohammed Attrash, Mohan Kumar Kuntumalla, Cyril Popov, Tzach Jaffe, Roza Akhvlediani, Meir Orenstein, Lior Gal, Nina Felgen
Publikováno v:
Nano letters. 20(5)
We introduce and demonstrate a new approach for nitrogen-vacancy (NV) patterning in diamond, achieving a deterministic, nanometer-thin, and dense delta-doped layer of negatively charged NV centers in diamond. We employed a pure nitridation stage usin
Autor:
Tzach Yaffe, Elyse Barré, Takashi Taniguchi, Katayun Barmak, Bumho Kim, Sze Cheung Lau, Eric Yue Ma, Janina Maultzsch, Roland Gillen, Tony F. Heinz, Lior Gal, Meir Orenstein, Kenji Watanabe, Ralph H. Page, Ouri Karni
Publikováno v:
Conference on Lasers and Electro-Optics.
We report light emission around 1200 nm from a vertical heterostructure consisting of M0S2 and WSe2 monolayers. The emission, arising from the fundamental interlayer exciton, can be tuned by nearly 100 nm by electrical gating.
Publikováno v:
International Journal of Intercultural Relations. 67:12-24
This study examined the interplay between national identity, autobiographical narratives on national identity and the adjustment of immigrant and majority groups in Israel. Participants were 193 Jewish Israelis (63.68% female; mean age 29.54 years);
Publikováno v:
Nano Letters. 17:4217-4222
The negatively charged nitrogen-vacancy (NV) color center in diamond is an important atom-like system for emergent quantum technologies and sensing at room temperature. The light emission rates and collection efficiency are key issues toward realizin
Publikováno v:
Scopus-Elsevier
The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality single-photon source for quantum information processing and quantum electrodynamics applications[1]. The dipole moment of the SiV is aligned predominantly alon
Autor:
Tzach Jaffe, Nina Felgen, Lior Gal, Lior Kornblum, Cyril Popov, Johann Peter Reithmaier, Meir Orenstein
Publikováno v:
Conference on Lasers and Electro-Optics.
Single Photon Avalanche Diode Collection Efficiency Enhancement via Peripheral Well-Controlled Field
Autor:
M. Javitt, Yael Nemirovsky, David Cristea, Tomer Leitner, Amos Feiningstein, Lior Gal, Vitali Savuskan
Publikováno v:
IEEE Transactions on Electron Devices. 62:1939-1945
Single-photon avalanche diodes photon detection efficiency (PDE) and breakdown uniformity are studied. An approach to increase the PDE based on controlled breakdown of the peripheral region of the junction is described. Parameters influencing and con
Autor:
S. Chick, Igor Brouk, Vitali Savuskan, Sharon Bar-Lev, M. Javitt, Yael Nemirovsky, Renato Turchetta, Lior Gal, Gil Visokolov, Rebecca E. Coath, A. Feiningstein, Tomer Leitner
Publikováno v:
IEEE Transactions on Electron Devices. 60:1982-1988
This paper presents the key features of single photon avalanche diode (SPAD) devices fabricated in a low voltage commercial 180-nm CMOS image sensor technology exhibiting very low dark count rate (DCR). The measured DCR is
Autor:
Lior Gal, Meir Orenstein, Philip Kahl, Bettina Frank, Anna-Katharina Mahro, Deirdre Kilbane, Martin Aeschlimann, Grisha Spektor, Daniel Podbiel, Harald Giessen, F.-J. Meyer zu Heringdorf
Publikováno v:
2016 IEEE Photonics Conference (IPC).
We experimentally reveal the sub-optical cycle dynamic formation, revolution and decay of plasmonic vortices using time-resolved two-photon photoemission electron microscopy with