Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Lionel Portigliatti"'
Autor:
Cécile Berne, Takeshi Akatsu, Muriel Martinez, Jean-Michel Hartmann, Christophe Figuet, Yves-Matthieu Le Vaillant, Chrystel Deguet, Cecile Aulnette, Fabrice Lallement, Lionel Portigliatti, Frederic Allibert, Nicolas Boudou, Alexandra Abbadie, Fanny Triolet, Y. Bogumilowicz, Cyrille Colnat, Phuong Nguyen, Cécile Delattre, Kira Tsyganenko, Denis Rouchon
Publikováno v:
ECS Transactions. 3:107-117
Bi-axially highly-strained Silicon-On-Insulator (sSOI) substrates with a tensile stress up to 2.5 GPa have been obtained by Smart CutTM technology. Thin strained silicon (sSi) layers epitaxially grown on relaxed Si0.6Ge0.4 virtual substrates (VS) wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e7f02313f6da506b31ebafdda93bbd
https://doi.org/10.1149/1.2357060
https://doi.org/10.1149/1.2357060
Autor:
Phuong Nguyen, K. K. Bourdelle, N. Rochat, Lionel Portigliatti, Alice Boussagol, Thibaut Maurice, Aurélie Tauzin, Nicolas Sousbie, Fabrice Letertre, X. Hebras
Publikováno v:
Journal of Applied Physics. 101:033506
In this paper we study the effect of the order and dose of H and He sequential implantation on H interaction with Si lattice defects. We use systematic infrared absorption measurements to investigate the evolution of hydrogenated point defects comple
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::def93c0c63fbd5a30d2b113ff74b250f
https://doi.org/10.1063/1.2432380
https://doi.org/10.1063/1.2432380
Autor:
Takeshi Akatsu, Jean-Michel Hartmann, CcCile Aulnette, Yves-Matthieu Le Vaillant, Denis Rouchon, Alexandra Abbadie, Yann Bogumilowicz, Lionel Portigliatti, Cyrille Colnat, Nicolas Boudou, Fabrice Lallement, Fanny Triolet, Christophe Figuet, Muriel Martinez, Phuong Nguyen, CcCile Delattre, Kira Tsyganenko, CcCile Berne, FrcDcRic Allibert, Chrystel Deguet
Publikováno v:
ECS Meeting Abstracts. :1358-1358
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7eda4f599d2869e6b296074fa33d520
https://doi.org/10.1149/ma2006-02/30/1358
https://doi.org/10.1149/ma2006-02/30/1358