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Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb 2 Te 3 /Bi 2 Te 3 Topological Insulator Heterostructure for Spin-Charge Conversion.

Autor: Longo E; CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza 20864, Italy., Locatelli L; CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza 20864, Italy., Tsipas P; National Centre for Scientific Research 'Demokritos', Institute of Nanoscience and Nanotechnology, Agia Paraskevi 15341, Athens, Greece., Lintzeris A; National Centre for Scientific Research 'Demokritos', Institute of Nanoscience and Nanotechnology, Agia Paraskevi 15341, Athens, Greece.; Department of Physics, School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Athens 10682, Greece., Dimoulas A; National Centre for Scientific Research 'Demokritos', Institute of Nanoscience and Nanotechnology, Agia Paraskevi 15341, Athens, Greece., Fanciulli M; Department of Material Science, University of Milano Bicocca, Via R. Cozzi 55, Milan 20125, Italy., Longo M; CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza 20864, Italy.; Department of Chemical Science and Technologies, University of Rome Tor Vergata, Via della Ricerca Scientifica, Rome 100133, Italy., Mantovan R; CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza 20864, Italy.

Publikováno v: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2023 Nov 01; Vol. 15 (43), pp. 50237-50245. Date of Electronic Publication: 2023 Oct 20.