Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Lino A. Velo"'
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:1893-1897
The use of copper interconnects enables higher speed, enhanced electromigration lifetime reliability, reduced power consumption, and ultimately reduced manufacturing cost for silicon integrated circuits. The formation of planarized inlaid copper inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e42e37ef3537feae7296804173e8932c
https://doi.org/10.1116/1.581700
https://doi.org/10.1116/1.581700
Autor:
T. Breedijk, Chuck Schaper, Mehrdad M. Moslehi, Ajit P. Paranjpe, Habib N. Najm, David Yin, John Kuehne, Dale Lee Anderson, Steve S. Huang, Richard A. Chapman, Lino A. Velo, Cecil J. Davis, Yong Jin Lee
Publikováno v:
Microelectronic Engineering. 25:93-130
This paper presents a demonstration of the total use of RTP for fast-cycle-time semiconductor IC production. The feasibility of eliminating batch processing for CMOS IC fabrication has been shown. Our fast-cycle-time flexible single-wafer minifactory
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2522837d703aedde86e5ed19e64356f
https://doi.org/10.1016/0167-9317(94)90007-8
https://doi.org/10.1016/0167-9317(94)90007-8
Publikováno v:
1992 Symposium on VLSI Technology Digest of Technical Papers.
An integrated sensor system for conductive layer deposition process control is presented. The process equipment employs a multizone illuminator and noninvasive sensors for dynamic process uniformity control, real-time process and end-pointing, and pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c081c64538ace4e3b8b476d851eaa3d
https://doi.org/10.1109/vlsit.1992.200641
https://doi.org/10.1109/vlsit.1992.200641
Publikováno v:
1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.
The dependence of performance and parasitic resistances on source/drain implant anneal conditions and on back-end-of-line maximum temperature is evaluated for (1) salicided CMOS using n/sup +//p/sup +/ poly gates with surface channel PMOS and for (2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::216ea52d4adeb5b2aedb0162069ead6c
https://doi.org/10.1109/vtsa.1993.263620
https://doi.org/10.1109/vtsa.1993.263620
Autor:
M.M. Mosiehl, A.P. Lane, Ih-Chin Chen, John Kuehne, William F. Richardson, J. Paterson, Lino A. Velo, P.S.-H. Ying, A.R. Paterson, Richard A. Chapman, C. Blanton
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
A sub-half micron CMOS technology has been developed using rapid thermal processing (RTP) and a simplified process design. The threshold voltages are set high to permit operation above room temperature without excessive leakage. Novel process feature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ef0bfc85eceb8fc0296d0f04e55e054
https://doi.org/10.1109/iedm.1991.235414
https://doi.org/10.1109/iedm.1991.235414
Autor:
Gary E. Miner, Sylvia Hossain-Pas, Arun K. Nanda, Lino A. Velo, Michael F. Pas, Terrence J. Riley
Publikováno v:
MRS Proceedings. 429
Under a joint development contract with Applied Materials (AMAT) and Texas Instruments (TI), SEMATECH undertook a project (Joint Development Project J100) with a goal of delivering a cost effective, technically advanced Rapid Thermal Processor (RTP).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cdeaedbc28ed7008e1560c24cfa89d9
https://doi.org/10.1557/proc-429-15
https://doi.org/10.1557/proc-429-15
Autor:
Lino A. Velo, Mehrdad M. Moslehi, Cecil J. Davis, Yong Jin Lee, Charles Schaper, Thomas R. Omstead, Ahmad Kermani
Publikováno v:
Advances in Rapid Thermal and Integrated Processing ISBN: 9789048146963
State-of-the-art semiconductor technologies employ thermal processing steps for various anneal, oxidation, and chemical vapor deposition (CVD) processes. Most of these fabrication processes have been dominated by hot-wall batch furnaces. Many other u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff94e2cbcc19b894b362d722fd4f8877
https://doi.org/10.1007/978-94-015-8711-2_6
https://doi.org/10.1007/978-94-015-8711-2_6
Publikováno v:
MRS Proceedings. 387
A Universal Thermal Module™ (UTM™) has been developed for vacuum-integrated cluster RTP and MOCVD as well as stand-alone atmospheric RTP applications. The UTM™ architecture provides highly modular RTP and MOCVD tool configurations for various s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7787bf372e24a30b31b8ea61c93bfb34
https://doi.org/10.1557/proc-387-159
https://doi.org/10.1557/proc-387-159
Autor:
T. Breedijk, Mehrdad M. Moslehi, John Kuehne, David Yin, Dick Yeakley, Rhett B. Jucha, Steve S. Huang, Lino A. Velo
Publikováno v:
SPIE Proceedings.
Twelve rapid thermal processes have been developed for over fifteen critical thermal fabrication steps in a sub-0.50 p.m CMOS technology. These processes include dielectric growth (dry and wet rapid thermal oxidations), thermal anneals (source/drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5795bb9971cf64d2ffe708ce30a84933
https://doi.org/10.1117/12.56671
https://doi.org/10.1117/12.56671
Autor:
Bill Dostalik, Lino A. Velo, John Kuehne, Habib N. Najm, Mehrdad M. Moslehi, David Yin, Richard L. Yeakley, Cecil J. Davis
Publikováno v:
MRS Proceedings. 224
Advanced rapid thermal processing (RTP) equipment and sensors have been developed for in-situ fabrication of semiconductor devices. High-performance multi-zone lamp modules have been applied to various processes including rapid thermal oxidation (RTO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::214048d0373ab86fc054fbcee1b22c39
https://doi.org/10.1557/proc-224-143
https://doi.org/10.1557/proc-224-143