Zobrazeno 1 - 10
of 182
pro vyhledávání: '"Linnarsson, M.K."'
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 August 2014 332:212-215
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 August 2014 332:130-133
Autor:
Linnarsson, M.K., Hallén, A.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 2012 273:127-130
Publikováno v:
In Applied Surface Science 2006 252(15):5316-5320
Publikováno v:
In Thin Solid Films 2006 515(2):611-614
Autor:
Monakhov, E.V., Svensson, B.G., Linnarsson, M.K., La Magna, A., Italia, M., Privitera, V., Fortunato, G., Cuscunà, M., Mariucci, L.
Publikováno v:
In Materials Science & Engineering B 2005 124:228-231
Autor:
Monakhov, E.V., Svensson, B.G., Linnarsson, M.K., La Magna, A., Italia, M., Privitera, V., Fortunato, G., Cuscunà, M., Mariucci, L.
Publikováno v:
In Materials Science & Engineering B 2005 124:232-234
Publikováno v:
Linnarsson, M.K. Hallen, Anders Vines, Lasse . Intentional and unintentional channeling during implantation of 51V ions into 4H-SiC. Semiconductor Science and Technology. 2019, 34
Semiconductor Science and Technology
Semiconductor Science and Technology
Autor:
Monakhov, E.V. *, Svensson, B.G., Linnarsson, M.K., Magna, A. La, Privitera, V., Camalleri, M., Fortunato, G., Mariucci, L.
Publikováno v:
In Materials Science & Engineering B 2004 114:352-357
Autor:
Monakhov, E.V. *, Svensson, B.G., Linnarsson, M.K., La Magna, A., Privitera, V., Fortunato, G., Mariucci, L.
Publikováno v:
In Materials Science & Engineering B 2004 114:114-117