Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Lingjie Guo"'
Autor:
Lingjie Guo, Jude Ash
Publikováno v:
Proceedings of the 2020 4th International Seminar on Education, Management and Social Sciences (ISEMSS 2020).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32245936ee6c7d198942a826e6de0d78
https://doi.org/10.2991/assehr.k.200826.207
https://doi.org/10.2991/assehr.k.200826.207
Autor:
Angel Morales, Rolando Tremont, Jasprit Singh, Felix A. Miranda, Carl H. Mueller, Daniel Blasini, Lingjie Guo, Joseph D. Warner, Carlos R. Cabrera
Publikováno v:
Integrated Ferroelectrics. 38:269-277
As the gate dimensions of MOSFET transistors continue to shrink, the number of donors used to dope the semiconductor and achieve the requisite channel conductivity drops. The ability to reproducibly fabricate channels with a small number of dopants,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4cd2e91ebb2f4ebe25349a9b4594bb6
https://doi.org/10.1080/10584580108016940
https://doi.org/10.1080/10584580108016940
Publikováno v:
Lab on a chip. 9(9)
We have developed a novel, microfabricated, stand-alone microfluidic device that can efficiently sort and concentrate (bio-)analyte molecules by using kinesin motors and microtubules as a chemo-mechanical transduction machine. The device removes hund
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c242e4d5a2215aa8b8f99d3199020f87
https://pubmed.ncbi.nlm.nih.gov/19370249
https://pubmed.ncbi.nlm.nih.gov/19370249
Publikováno v:
Applied Physics Letters. 73:3429-3431
A model is proposed to explain the charge-induced confinement enhancement observed in a stacked quantum-dot transistor that has a floating dot on top of a channel quantum dot. The model assumes that the charge on the floating dot distributes on its r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa478d28f8810b4b5418e766ee49a6e7
https://doi.org/10.1063/1.122787
https://doi.org/10.1063/1.122787
Publikováno v:
Applied Physics Letters. 72:1205-1207
We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillations are attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel. An
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fabdd2be8ed74e69c2025edcdca80ac4
https://doi.org/10.1063/1.121014
https://doi.org/10.1063/1.121014
Publikováno v:
Applied Physics Letters. 71:1881-1883
We report the fabrication and characterization of nanoscale silicon field effect transistors using nanoimprint lithography. With this lithographic technique and dry etching, we have patterned a variety of nanoscale transistor features in silicon, inc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fcec05ea064adc3b6f4ed9118f03012
https://doi.org/10.1063/1.119426
https://doi.org/10.1063/1.119426
Publikováno v:
Applied Physics Letters. 70:850-852
We have demonstrated a room-temperature silicon single-electron transistor memory that consists of (i) a narrow channel metal-oxide–semiconductor field-effect transistor with a width (∼10 nm) smaller than the Debye screening length of single elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::597a825ed0913ea827bf1f58e9e5f8fa
https://doi.org/10.1063/1.118236
https://doi.org/10.1063/1.118236
Publikováno v:
Science. 275:649-651
A single-electron memory, in which a bit of information is stored by one electron, is demonstrated at room temperature. The memory is a floating gate metal-oxide-semiconductor transistor in silicon with a channel width ( approximately 10 nanometers)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4879fc4309029e6037b5ccf36dab906
https://doi.org/10.1126/science.275.5300.649
https://doi.org/10.1126/science.275.5300.649
Publikováno v:
Applied Physics Letters. 67:2338-2340
Novel p‐channel quantum‐dot transistors were fabricated in silicon‐on‐insulator. Strong oscillations in the drain current as a function of the gate voltage have been observed at temperatures over 81 K and drain biases over 66 mV. The oscillat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c817cb98fddc6349056785c3f268d94
https://doi.org/10.1063/1.114337
https://doi.org/10.1063/1.114337
Publikováno v:
Applied Physics Letters. 67:938-940
We report the fabrication and characterization of lithographically defined nanoscale silicon quantum‐dot transistors that operate at temperatures over 100 K and a bias higher than 0.07 V. In the tunneling regime, these transistors show strong curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8463c5ba5a5fd6c806b06b4b7554fc88
https://doi.org/10.1063/1.114701
https://doi.org/10.1063/1.114701