Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Ling-Yen Yeh"'
Publikováno v:
Thin Solid Films. 539:360-364
Metal-ferroelectric-insulator-semiconductor structures with BiFeO 3 as the ferroelectric layer and zirconium oxide ZrO 2 as the insulator layer were fabricated by RF magnetron sputtering. The plasma condition was varied with different argon to oxygen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::501eec3d33aa5cf74b0b94d37028c586
https://doi.org/10.1016/j.tsf.2013.05.087
https://doi.org/10.1016/j.tsf.2013.05.087
Autor:
Alan Seabaugh, Maja Remškar, Ling-Yen Yeh, Sara Fathipour, Wilman Tsai, Susan K. Fullerton-Shirey, Yu-Ming Lin, Hua-Min Li
Publikováno v:
2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Record high current density of 300 μA/μm with low contact resistance of 200 Ω μm and a channel length of 0.8 μm at a drain-source bias of 1.6 V has been achieved for the first time in MoS2 field-effect transistors (FETs) grown by chemical vapor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d969027776beaafc5fd0019726f52b03
https://doi.org/10.1109/vlsi-tsa.2016.7480511
https://doi.org/10.1109/vlsi-tsa.2016.7480511
Publikováno v:
Microelectronic Engineering. 88:1217-1220
Metal-multiferroic (La-substituted BiFeO"3)-insulator (CeO"2)-semiconductor (MFIS) capacitors has been fabricated. The crystalline phase and amount of La^3^+ substitution at Bi-site were investigated by XRD and XPS in the postannealing temperature ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afa8086518d050f8d39a3988a1997a5e
https://doi.org/10.1016/j.mee.2011.03.043
https://doi.org/10.1016/j.mee.2011.03.043
Autor:
Ling-Yen Yeh, Chun Heng Chen, Mong-Song Liang, Joseph Ya-min Lee, Chee-Wee Liu, Jun Wu, T.-L. Lee, Ming-Han Liao
Publikováno v:
IEEE Transactions on Electron Devices. 56:2848-2852
The dependence of the performance of strained NMOSFETs on channel width was investigated. When the channel width was varied, the stress in the channel varied accordingly. This changed the electron effective mass and, consequently, the on-state curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65f2934817caf950e27d3a9c543641e3
https://doi.org/10.1109/ted.2009.2030542
https://doi.org/10.1109/ted.2009.2030542
Publikováno v:
IEEE Electron Device Letters. 29:402-404
The high-performance n-FET is achieved by ultra- high-stress contact-etch-stop-layer stressor and optimal design of device dimensions. The biaxial-like stress resulting from a high symmetry in device dimension (gate width/gate length ratio is close t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1c3b22664378e85a64b74539c05cbf1
https://doi.org/10.1109/led.2008.918420
https://doi.org/10.1109/led.2008.918420
Autor:
Simon Jang, L. T. Wang, J. Wu, Ming-Han Liao, T.-L. Lee, P. R. Jeng, J. C. Lu, Ling-Yen Yeh, Ming-Hua Yu
Publikováno v:
2009 International Symposium on VLSI Technology, Systems, and Applications.
Strained-Si technology is the Holy Grail for present semiconductor industry and is used extensively to boost the device performance, recently. However, the limitation of strained-Si technology has greatly perplexed us and need to investigate in detai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::674a91a854b4ab40537893b1f829cd88
https://doi.org/10.1109/vtsa.2009.5159277
https://doi.org/10.1109/vtsa.2009.5159277
Publikováno v:
2007 International Semiconductor Device Research Symposium.
In this article we present detailed stress simulation characterization of the 3-D boundary effects and show that the high-performance n FET can be achieved by the ultra-high-stress CESL stressor and optimal geometric structure design. A symmetric str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9b49823f6367e66e41132ebaa2d2fb4
https://doi.org/10.1109/isdrs.2007.4422230
https://doi.org/10.1109/isdrs.2007.4422230
Publikováno v:
Applied Physics Letters. 95:162902
In this study, metal-oxide-semiconductor (MOS) capacitors with high dielectric constant LaAlO3 film were fabricated. Furthermore, the characteristic time-to-breakdown, TBD, of the MOS capacitors was investigated. The TBD was measured and the correspo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16091ea79e109d85783cd03f6d3e1306
https://doi.org/10.1063/1.3250242
https://doi.org/10.1063/1.3250242
Publikováno v:
Applied Physics Letters. 92:063506
It is found that the ballistic efficiency, channel backscattering ratio, and injection velocity, which are the most important parameters for the ballistic transport, are greatly influenced by the stress characteristic in the channel even on the same
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d05914727395f68b1a8cc42bbac637fa
https://doi.org/10.1063/1.2839402
https://doi.org/10.1063/1.2839402
Publikováno v:
Journal of Applied Physics. 103:013105
A metal-oxide-semiconductor tunneling diode is used to emit electroluminescence from a Si/Si0.2Ge0.8 heterojunction. Besides the 1.1 μm and 1.6 μm infrared emission from the band edges of Si and SiGe, respectively, 2 μm infrared emission is also o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09da2b607e3847d47a8a7e87bbda47cb
https://doi.org/10.1063/1.2817811
https://doi.org/10.1063/1.2817811