Zobrazeno 1 - 10
of 177
pro vyhledávání: '"Ling-Feng Mao"'
Publikováno v:
International Journal of Electrical Power & Energy Systems, Vol 161, Iss , Pp 110172- (2024)
The instability of the inverse problem is caused by its nonlocal and non-causal nature. This study addresses the inverse problem of determining the physical parameters of semiconductor devices. Based on statistical inversion theory, the probability d
Externí odkaz:
https://doaj.org/article/e93b4bb0f7104d6d87c0a90e73ac30ab
Autor:
Ling-Feng Mao
Publikováno v:
Results in Physics, Vol 64, Iss , Pp 107929- (2024)
A transient heat conduction equation has been proposed to describe the cooling process of a hot two-dimensional electron gas layer in a GaN-based transistor. This equation serves as the basis for a physical analytical model that explains the impacts
Externí odkaz:
https://doaj.org/article/0aa46170aa464196acf599f579f19c72
Publikováno v:
PhytoKeys, Vol 241, Iss , Pp 191-200 (2024)
A new spleenwort species, Asplenium guodanum, was found and described from Danxia landform region in Guangdong, China. The new species has close resemblance to A. subcrenatum Ching ex S.H.Wu in morphology, but can be distinguished by having plants sm
Externí odkaz:
https://doaj.org/article/f259c88b52c8482eadfafe2e9f3f23a1
Autor:
Ling-Feng Mao
Publikováno v:
ETRI Journal, Vol 44, Iss 3, Pp 504-511 (2022)
Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change le
Externí odkaz:
https://doaj.org/article/d3cf6ce203834e97874ed05bc116ac77
Autor:
Ling-Feng Mao
Publikováno v:
Results in Physics, Vol 37, Iss , Pp 105528- (2022)
However evanescent coupling between acoustic waveguides has been well studied by the mode-matching method in the literature, a proposed physical model based on the tunnelling concept is used to explain such coupling. Based on phonons being one type o
Externí odkaz:
https://doaj.org/article/8c2a2fc2389947b088c1aa1bff0040e9
Publikováno v:
European Journal of Taxonomy, Vol 798, Iss 1 (2022)
The Asplenium coenobiale complex is distributed in Eastern Asia and Southeast Asia with its distribution center in southwestern China. In this study, we carried out a detailed morphological, cytological, and phylogenetic study by adding two samples f
Externí odkaz:
https://doaj.org/article/8e2b73ea84fe4934ae874b04bf795e6a
Autor:
Ling-Feng Mao
Publikováno v:
IEEE Access, Vol 8, Pp 65970-65982 (2020)
Because thermionic emission or tunneling occurs when carriers overcome or tunneling through the barrier for any Schottky diode, hot carriers caused by the applied electric field can enhance carrier thermionic emission or carrier tunneling. An analyti
Externí odkaz:
https://doaj.org/article/b51f47f8f0a1413f937d410e213713cf
Autor:
Ling-Feng Mao
Publikováno v:
Results in Physics, Vol 30, Iss , Pp 104894- (2021)
The kink in the source-drain current of GaN devices has been not clarified. Based on the Maxwell-Boltzmann distribution of hot channel electrons, the generation of excess carriers in the L valleys of GaN and the origin of the kink had been modeled. T
Externí odkaz:
https://doaj.org/article/774f24700f1345a1a6abd46205303b18
Publikováno v:
PLoS ONE, Vol 10, Iss 6, p e0128438 (2015)
Influence of the energy relaxation of the channel electrons on the performance of AlGaN/GaN high-electron mobility transistors (HEMTs) has been investigated using self-consistent solution to the coupled Schrödinger equation and Poisson equation. The
Externí odkaz:
https://doaj.org/article/4f8d02cbc51a43598a72b6ab588ba4b0
Publikováno v:
Journal of Mountain Science. 19:1336-1347
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8902bd2c75b7f3ea67716fd6af01e155
https://doi.org/10.1007/s11629-021-7083-x
https://doi.org/10.1007/s11629-021-7083-x