Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Linez, Florence"'
Autor:
Sengupta, Shamashis, Tisserond, Emilie, Linez, Florence, Monteverde, Miguel, Murani, Anil, Rödel, Tobias, Lecoeur, Philippe, Maroutian, Thomas, Marrache-Kikuchi, Claire, Santander-Syro, Andrés F., Fortuna, Franck
Publikováno v:
Journal of Applied Physics 124, 213902 (2018)
Electronic properties of low dimensional superconductors are determined by many-body-effects. This physics has been studied traditionally with superconducting thin films, and in recent times with two-dimensional electron gases (2DEGs) at oxide interf
Externí odkaz:
http://arxiv.org/abs/1810.08069
Autor:
Fioretti, Angela N, Schwartz, Craig P, Vinson, John, Nordlund, Dennis, Prendergast, David, Tamboli, Adele C, Caskey, Christopher M, Tuomisto, Filip, Linez, Florence, Christensen, Steven T, Toberer, Eric S, Lany, Stephan, Zakutayev, Andriy
Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit
Externí odkaz:
http://arxiv.org/abs/1601.03362
Autor:
Linez, Florence
Le carbure de silicium est un des materiaux envisages pour des applications nucleaires tels que les reacteurs a fission de 4eme generation et les reacteurs a fusion. Dans ce cadre, le SiC serait soumis a des conditions extremes de temperatures et d
Externí odkaz:
http://www.theses.fr/2012ORLE2006/document
Autor:
Cordier, Yvon, Damilano, Benjamin, Aing, Phannara, Chaix, Catherine, Linez, Florence, Tuomisto, Filip, Vennéguès, Philippe, Frayssinet, Eric, Lefebvre, Denis, Portail, Marc, Nemoz, Maud
Publikováno v:
In Journal of Crystal Growth 1 January 2016 433:165-171
Autor:
Fioretti, Angela N., Schwartz, Craig P., Vinson, John, Nordlund, Dennis, Prendergast, David, Tamboli, Adele C., Caskey, Christopher M., Tuomisto, Filip, Linez, Florence, Christensen, Steven T., Toberer, Eric S., Lany, Stephan, Zakutayev, Andriy
Publikováno v:
Journal of Applied Physics; 5/14/2016, Vol. 119 Issue 18, p181508-1-181508-10, 10p, 1 Diagram, 1 Chart, 7 Graphs
Influence of ion energy on damage induced by Au-ion implantation in silicon carbide single crystals.
Autor:
Gentils, Aurélie Aurelie.Gentils@csnsm.in2p3.fr, Linez, Florence, Canizarès, Aurélien, Simon, Patrick, Thomé, Lionel1, Barthe, Marie-France
Publikováno v:
Journal of Materials Science. Oct2011, Vol. 46 Issue 19, p6390-6395. 6p. 6 Graphs.