Recent advances and current challenges in the search for high mobility band-edge high-k/metal gate stacks

Autor: Narayanan, V., Paruchuri, V.K., Cartier, E., Linder, B.P., Bojarczuk, N., Guha, S., Brown, S.L., Wang, Y., Copel, M., Chen, T.C.

Publikováno v: In Microelectronic Engineering 2007 84(9):1853-1856

Effect and model of gate oxide breakdown on CMOS inverters

Autor: Rodrı́guez, R, Stathis, J.H, Linder, B.P

Publikováno v: In Microelectronic Engineering 2004 72(1):34-38

Reliability of ultra-thin oxides in CMOS circuits

Autor: Stathis, J.H., Linder, B.P., Rodrı́guez, R., Lombardo, S.

Publikováno v: In Microelectronics Reliability 2003 43(9):1353-1360

Analysis of the effect of the gate oxide breakdown on SRAM stability

Autor: Rodrı́guez, R., Stathis, J.H., Linder, B.P., Kowalczyk, S., Chuang, C.T., Joshi, R.V., Northrop, G., Bernstein, K., Bhavnagarwala, A.J., Lombardo, S.

Publikováno v: In Microelectronics Reliability 2002 42(9):1445-1448

Reliability of ultra-thin oxides in CMOS circuits

Autor: Stathis J.H., Linder B.P., Rodríguez R., Lombardo S.

Publikováno v: Microelectronics and reliability 43 (2003): 1353–1360.
info:cnr-pdr/source/autori:Stathis J.H., Linder B.P., Rodríguez R., Lombardo S./titolo:Reliability of ultra-thin oxides in CMOS circuits/doi:/rivista:Microelectronics and reliability/anno:2003/pagina_da:1353/pagina_a:1360/intervallo_pagine:1353–1360/volume:43

Hyper-thin films (about 1 nm or thinner) of SiO2 or silicon oxynitride continue to be a critical component as the gate insulator in high-performance MOSFETs or as the interfacial layer in high-k stacks for low power applications. Controversly remains

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::74cad15059c1294516d3a666ce69b1e5
https://publications.cnr.it/doc/35457