Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Linda Depoyan"'
Publikováno v:
Solid-State Electronics. 53:865-868
Facet apparition during selective epitaxial growth of silicon and silicon–germanium alloys is reported in terms of morphology and kinetics. Epitaxial growth was performed on (0 0 1) Si wafers by chemical vapour deposition using the H2/HCl/SiH2Cl2 c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e99baa373579f835f79e820d13ae5120
https://doi.org/10.1016/j.sse.2009.04.038
https://doi.org/10.1016/j.sse.2009.04.038
Publikováno v:
ECS Transactions. 2:13-21
While most of the SiO2 etch processes for microelectronics focus on very small dimensions, some specific embedded applications require thick oxide etching. For the purpose of a thick damascene copper layer, the morphological properties of a C5F8 (oct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59900c645cd8a6f16d983f95752ce8df
https://doi.org/10.1149/1.2204813
https://doi.org/10.1149/1.2204813
Publikováno v:
ECS Meeting Abstracts. :368-368
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db2b9fb8aa6207951449664c84c269b6
https://doi.org/10.1149/ma2006-01/8/368
https://doi.org/10.1149/ma2006-01/8/368
Autor:
Laurent Pain, Murielle Jurdit, Yves Laplanche, Jérôme Todeschini, Hugues Leininger, Sonia Tourniol, Romuald Faure, Xavier Bossy, Ramiro Palla, Alessio Beverina, Marcel Broekaart, Fabienne Judong, Karine Brosselin, Linda Depoyan, Yannick Le Friec, Francois Leverd, Veronique De Jonghe, Emmanuelle Josse, Olivier Hinsinger, Philippe Brun, Daniel Henry, Michael Woo, Peter Stolk, Brice Tavel, Franck Arnaud
Publikováno v:
Japanese Journal of Applied Physics. 43:3755
In the frame of the ALLIANCE program between Motorola, Philips Semiconductors and STMicroelectronics, electron beam direct write (EBDW) lithography based on shaped beam projection is employed to start quickly an aggressive 65 nm program for the print
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbc091c6d6affaf7bb299952a1c862b8
https://doi.org/10.1143/jjap.43.3755
https://doi.org/10.1143/jjap.43.3755