Zobrazeno 1 - 10
of 211
pro vyhledávání: '"Lincoln J. Lauhon"'
Autor:
William Rose, Holger Haas, Angela Q. Chen, Nari Jeon, Lincoln J. Lauhon, David G. Cory, Raffi Budakian
Publikováno v:
Physical Review X, Vol 8, Iss 1, p 011030 (2018)
We present a new method for high-resolution nanoscale magnetic resonance imaging (nano-MRI) that combines the high spin sensitivity of nanowire-based magnetic resonance detection with high-spectral-resolution nuclear magnetic resonance (NMR) spectros
Externí odkaz:
https://doaj.org/article/f9e1e0c3314a4b91bd87b1b6e2155586
Publikováno v:
Physical Review X, Vol 3, Iss 4, p 049901 (2013)
Externí odkaz:
https://doaj.org/article/acb380747e1346309f72a2d64285bc72
Publikováno v:
Physical Review X, Vol 3, Iss 3, p 031016 (2013)
We report a method for nanometer-scale pulsed nuclear magnetic resonance imaging and spectroscopy. Periodic radio-frequency pulses are used to create temporal correlations in the statistical polarization of a solid organic sample. The spin density is
Externí odkaz:
https://doaj.org/article/b38942d958384091988fcce39d28dc62
Autor:
Xinming Zhuang, Joon-Seok Kim, Wei Huang, Yao Chen, Gang Wang, Jianhua Chen, Yao Yao, Zhi Wang, Fengjing Liu, Junsheng Yu, Yuhua Cheng, Zaixing Yang, Lincoln J. Lauhon, Tobin J. Marks, Antonio Facchetti
Publikováno v:
Proceedings of the National Academy of Sciences. 120
Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (S
Publikováno v:
ACS nano.
Inks based on two-dimensional (2D) materials could be used to tune the properties of printed electronics while maintaining compatibility with scalable manufacturing processes. However, a very wide range of performances have been reported in printed t
Autor:
Megan O. Hill, Paul Schmiedeke, Chunyi Huang, Siddharth Maddali, Xiaobing Hu, Stephan O. Hruszkewycz, Jonathan J. Finley, Gregor Koblmüller, Lincoln J. Lauhon
Publikováno v:
ACS nano. 16(12)
InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core-shell geometry in principle allows for a greater tuning of c
Autor:
Lidia, Kuo, Vinod K, Sangwan, Sonal V, Rangnekar, Ting-Ching, Chu, David, Lam, Zhehao, Zhu, Lee J, Richter, Ruipeng, Li, Beata M, Szydłowska, Julia R, Downing, Benjamin J, Luijten, Lincoln J, Lauhon, Mark C, Hersam
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 34(34)
Printed 2D materials, derived from solution-processed inks, offer scalable and cost-effective routes to mechanically flexible optoelectronics. With micrometer-scale control and broad processing latitude, aerosol-jet printing (AJP) is of particular in
Autor:
Mohsen Nami, Paul J. M. Smeets, Jung Han, Alexander S. Chang, Bingjun Li, Lincoln J. Lauhon, Sizhen Wang
Publikováno v:
ACS Applied Electronic Materials. 3:704-710
Nonplanar GaN p–n junctions formed by selective area regrowth were analyzed using pulsed laser atom probe tomography. Dilute Al marker layers were used to map the evolution of the p-GaN growth inte...
Autor:
Lert Chayanun, Susanna Hammarberg, Megan O. Hill, Sebastian Kalbfleisch, Vilgailė Dagytė, Magnus Heurlin, Ulf Johansson, Alexander Björling, Jesper Wallentin, Lincoln J. Lauhon, Alexander Wyke, Magnus T. Borgström
Publikováno v:
Nano Research. 13:2460-2468
Axially heterostructured nanowires are a promising platform for next generation electronic and optoelectronic devices. Reports based on theoretical modeling have predicted more complex strain distributions and increased critical layer thicknesses tha
Autor:
Martin Friedl, Wonjong Kim, Kris Cerveny, Lucas Güniat, Mohammad Samani, Nicholas Morgan, Lincoln J. Lauhon, Didem Dede, Dominik M. Zumbühl, Anna Fontcuberta i Morral, J. Segura-Ruiz, Megan O. Hill, Chunyi Huang
Publikováno v:
Nano Letters
'Nano Letters ', vol: 20, pages: 3577-3584 (2020)
'Nano Letters ', vol: 20, pages: 3577-3584 (2020)
Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier