Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Linas ARDARAVIČIUS"'
Autor:
Linas ARDARAVIČIUS, Skirmantas KERŠULIS, Oleg KIPRIJANOVIČ, Česlovas ŠIMKEVIČIUS, Steponas AŠMONTAS
Publikováno v:
Medžiagotyra, Vol 26, Iss 3, Pp 358-362 (2020)
The Barkhausen method is proposed to clarify the cause of radiation of electromagnetic (EM) pulses during high voltage pulse generation by piezoelectric igniters (PIs). Wide bandwidth of the experimental setup was narrowed for a simultaneous registra
Externí odkaz:
https://doaj.org/article/0fc5926def4b438aa5f41b39afa130c3
Publikováno v:
Results in Physics, Vol 24, Iss , Pp 104156- (2021)
Pulsed current–voltage characteristics have been measured for CVD monolayer graphene and exfoliated MoS2 on HfO2 and Al2O3 (sapphire) under controlled lattice temperature conditions. The unintentional donor density in MoS2 is 3.6 × 1011cm−3 and
Externí odkaz:
https://doaj.org/article/27557c0b7578479383eebf88fa9d287a
Publikováno v:
Integrated Ferroelectrics. 220:120-131
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c04cbc17460e9f430a2c3fac4146b5eb
https://doi.org/10.1080/10584587.2021.1921541
https://doi.org/10.1080/10584587.2021.1921541
Publikováno v:
Medžiagotyra, Vol 19, Iss 2, Pp 129-133 (2013)
Three-dimensional electron gas/slabs (3DEG/S) can be obtained using the technique of polarization bulk doping in graded AlGaN semiconductor layer on GaN. Transport characteristics of the graded AlGaN are investigated experimentally through nanosecond
Externí odkaz:
https://doaj.org/article/ffba55f1875043f2bbc540586b966e0d
Autor:
Steponas Ašmontas, Skirmantas Kersulis, Linas Ardaravičius, Oleg Kiprijanovič, Č. Šimkevičius
Publikováno v:
Medžiagotyra, Vol 26, Iss 3, Pp 358-362 (2020)
The Barkhausen method is proposed to clarify the cause of radiation of electromagnetic (EM) pulses during high voltage pulse generation by piezoelectric igniters (PIs). Wide bandwidth of the experimental setup was narrowed for a simultaneous registra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee739eb8c8a303ff335702a468632164
http://matsc.ktu.lt/index.php/MatSc/article/view/23320
http://matsc.ktu.lt/index.php/MatSc/article/view/23320
Autor:
E. Šermukšnis, A. Šimukovič, Oleg Kiprijanovič, Linas Ardaravičius, M. Ramonas, Arvydas Matulionis
Publikováno v:
Lithuanian Journal of Physics. 60
High-field electron transport measurements by applying short (few ns) voltage pulses on nominally undoped n-type Zn-polar ZnO epilayers are reported and interpreted in terms of the Boltzmann kinetic equation. The transient measurements do not demonst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c0bb39dac261db6104a01f0080c476
https://doi.org/10.3952/physics.v60i1.4163
https://doi.org/10.3952/physics.v60i1.4163
Autor:
Jonas Gradauskas, Skirmantas Kersulis, Linas Ardaravičius, Steponas Ašmontas, Oleg Kiprijanovič, Č. Šimkevičius
Publikováno v:
Superconductor Science and Technology. 33:095013
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdb58f5fa8e3fdcee9b3ee5418ac6e0e
https://doi.org/10.1088/1361-6668/aba351
https://doi.org/10.1088/1361-6668/aba351
Autor:
Arvydas Matulionis, L.F. Eastman, M. Ramonas, Xiaodong Chen, Y. J. Sun, James R. Shealy, O. Kiprijanovic, J. Liberis, Linas Ardaravičius
Publikováno v:
physica status solidi (a). 202:808-811
Nanosecond-pulsed current-voltage measurements were used to study hot-electron transport in undoped AlGaN/GaN and AlGaN/AlN/GaN two-dimensional electron gas channels biased up to 200 kV/cm. Voltage pulses of 1 ns were applied in order to minimize cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31fcf66db46a653bb2a3aef2d0095a12
https://doi.org/10.1002/pssa.200461618
https://doi.org/10.1002/pssa.200461618
Autor:
Arvydas Matulionis, James R. Shealy, A. Vertiatchikh, Linas Ardaravičius, L.F. Eastman, J. Liberis
Publikováno v:
physica status solidi (a). 201:203-206
Equivalent noise temperature and spectral intensity of current fluctuations at 10 GHz frequency are investigated for Al 0.15 Ga 0.85 N/GaN channels. Dependence on electric field strength and voltage pulse duration is studied, channel self-heating eff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3c2c322b22bea29c4a1323a0e2c367d
https://doi.org/10.1002/pssa.200303901
https://doi.org/10.1002/pssa.200303901
Autor:
Mykyta Toporkov, Hadis Morkoç, Juozapas Liberis, E. Šermukšnis, Vitaliy Avrutin, M. Ramonas, Oleg Kiprijanovič, Arvydas Matulionis, Linas Ardaravičius, Ümit Özgür
Publikováno v:
Materials Research Express. 4:066301
Current–voltage characteristics have been measured for ZnO:Ga and Zn:Sb epitaxial layers with electron densities ranging from cm−3 to cm−3. Two-terminal samples with coplanar electrodes demonstrate virtually ohmic behavior until thermal effects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb55cf58cf3de0057366b0f6c4d8c897
https://doi.org/10.1088/2053-1591/aa744b
https://doi.org/10.1088/2053-1591/aa744b