Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Lin-Yi Shih"'
Autor:
Lin-Yi Shih, 施伶宜
105
In this study, indium metal was introduced as the electrode with HfO2-based of RRAM device. The device is fabricated as the structure of In/HfO2/TiN which produce characteristics of low operation voltage, low power consumption, high read mar
In this study, indium metal was introduced as the electrode with HfO2-based of RRAM device. The device is fabricated as the structure of In/HfO2/TiN which produce characteristics of low operation voltage, low power consumption, high read mar
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/mzy455
Autor:
Wei-Chen Huang, Lin-Yi Shih, Hui-Chun Huang, Wen-Chung Chen, Yi-Ting Tseng, Ting-Chang Chang, Tsung-Ming Tsai, Simon M. Sze, Chih-Cheng Shih, Chih-Cheng Yang, Pei-Yu Wu, Yao-Kai Shih, Hao-Xuan Zheng
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 13:1900285
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97fef15c06a80997fabc1c0774463e70
https://doi.org/10.1002/pssr.201900285
https://doi.org/10.1002/pssr.201900285
Autor:
Lin, Yi-shih1 (AUTHOR), Nikravesh, ParvizE.1 (AUTHOR) pen@email.arizona.edu
Publikováno v:
Mechanics Based Design of Structures & Machines. Nov2006, Vol. 34 Issue 4, p469-488. 20p. 8 Diagrams.
In today’s economy, engineering companies strive to reduce product development time and costs. One approach to assisting this goal is to introduce computer-aided methods and tools earlier in the development process. This requires providing robust d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______518::b62a09886fb559b5e6525ac74e16938b
https://mediatum.ub.tum.de/1167348
https://mediatum.ub.tum.de/1167348
Autor:
Lin, Yi-shih
Methods of component mode synthesis, such as Craig and Bampton reduction, are known to generally yield more accurate results in deformable multibody dynamics. The main shortcoming of those methods is that they are intuitively based. Recently Nikraves
Externí odkaz:
http://hdl.handle.net/10150/193844
Autor:
Zhang, Zhensheng, Huang, Yi, Lin, Yi-Shih, Zhan, Yankun, Sun, Dongmei, Cheng, Shiqiu, Yang, Feng, Shi, Yaoming, Xu, Yiping
Publikováno v:
2016 China Semiconductor Technology International Conference (CSTIC); 2016, p1-3, 3p
Publikováno v:
2016 China Semiconductor Technology International Conference (CSTIC); 2016, p1-3, 3p
Autor:
Chen, Chao Jung, Gao, Xiang Yang, Lin, Yi Shih, Cheng, Lien Huang, Kuo, Chia Chu, Xing, GuoQiang, Zhou, De-Ling, Muramatsu, Makoto, Nakashima, Masahiko
Publikováno v:
Proceedings of SPIE; Nov2005, Issue 1, p339-352, 14p
Autor:
Sanchez, Martha I., Ukraintsev, Vladimir A., Deng, Guogui, Hao, Jingan, Xiao, Lihong, Xing, Bin, Jiang, Yuntao, He, Kaiting, Zhang, Qiang, He, Weiming, Liu, Chang, Lin, Yi-Shih, Wu, Qiang, Shi, Xuelong
Publikováno v:
Proceedings of SPIE; March 2016, Vol. 9778 Issue: 1 p97782C-97782C-13, 9680432p
Autor:
Fu, Zubiao, Zhang, Shijian, Huang, Yi, Lin, Yi-Shih, Shi, Lanyan, Zhang, Cong, Shi, Yaoming, Xu, Yiping
Publikováno v:
2015 China Semiconductor Technology International Conference; 2015, p1-3, 3p