Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Lin-Yao Wang"'
THE MAJOR CAUSE FOR SLIDING FAILURE OF SIDE WALLS DURING BASEMENT EXCAVATION IN HIGH-RISE BUILDINGS.
Autor:
Tse-Shan Hsu1 tshsu@fcu.edu.tw, Lin-Yao Wang2
Publikováno v:
International Journal of Organizational Innovation. Oct2024, Vol. 17 Issue 2, p185-214. 30p.
Publikováno v:
International Journal of Organizational Innovation. Oct2024, Vol. 17 Issue 2, p95-105. 11p.
Publikováno v:
International Journal of Organizational Innovation. Jan2022, Vol. 14 Issue 3, p56-79. 24p.
Autor:
Tse-Shan Hsu1 tshsu@fcu.edu.tw, Lin-Yao Wang2, Chang-Chi Tsao3, Hong-Chia Chang3, Tsai-Fu Chuang4
Publikováno v:
International Journal of Organizational Innovation. Jan2021, Vol. 13 Issue 3, p220-247. 28p.
Autor:
Yao Jiang-hong, Wang Zhan-Guo, Xu Jing-Jun, Pi Biao, Shu Qiang, Xing Xiao-Dong, Shu Yong-Chun, Lin Yao-Wang
Publikováno v:
Chinese Physics Letters. 23:436-438
A GaAs/AlGaAs two-dimensional electron gas (2 DEG) structure with the high mobility of mu(2K) = 1.78 x 10(6) cm(2)/Vs has been studied by low-temperature Hall and Shubnikov de Hass (SdH) measurements. Quantum lifetimes related to all-angle scattering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f3b3e3ed7cad1825d039179a209684b
https://doi.org/10.1088/0256-307x/23/2/045
https://doi.org/10.1088/0256-307x/23/2/045
Autor:
Xu Jing-Jun, Wang Zhan-Guo, Zhang Guan-jie, Pi Biao, Shu Qiang, Liu Ru-bin, Lin Yao-Wang, Xing Xiao-Dong, Yao Jiang-Hong, Shu Yong-Chun
Publikováno v:
Acta Physica Sinica. 55:1379
We obtained the high mobility of μ2K=1.78×106 cm2/V·s in Si-doped GaAs/AlGaAs two-dimensional electron gas (2DEG) structures . After the sample was illuminated by a light-emitting diode in magnetic fields up to 6 T at T=2K, we did observe the pers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd0fc2517e7e29c8cd81fb1aefeaaccf
https://doi.org/10.7498/aps.55.1379
https://doi.org/10.7498/aps.55.1379
Autor:
Yuan Zhi-liang, Lü Zhen-Dong, Niu Zhi-Chuan, Xu Zhong-Ying, Lin Yao-Wang, Li Xin-Feng, Zhang Yi, Zhou Zeng-Qi, Hu Xiong Wei
Publikováno v:
Acta Physica Sinica. 46:969
The structures of the strained InGaAs/GaAs ridge quantum wires(QWRs) were proposed and the samples fabricated by MBE growth on patterned substrate. High resolution scanning electron microscope (SEM) studies showed that these ridge structures were for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fc276e6273e9395f8c50a6f86eda2a9
https://doi.org/10.7498/aps.46.969
https://doi.org/10.7498/aps.46.969
Publikováno v:
Journal of Crystal Growth. 70:108-111
The epitaxial growth of high purity GaAs has been carried out successfully with a leak-free and corrosion resistant AsCl 3 -Ga-Ar system. A background free carrier concentration of 7.35 × 10 12 cm -3 , a mobility of 2.05 × 10 5 cm 2 /V · s at 77 K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71d618ea573436299de0ef8b0cefd75c
https://doi.org/10.1016/0022-0248(84)90253-7
https://doi.org/10.1016/0022-0248(84)90253-7
Publikováno v:
In Journal of Crystal Growth 1982 56(2):344-349