Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Lin-Qing Zhang"'
Autor:
Lin-Qing Zhang, Wan-Qing Miao, Xiao-Li Wu, Jing-Yi Ding, Shao-Yong Qin, Jia-Jia Liu, Ya-Ting Tian, Zhi-Yan Wu, Yan Zhang, Qian Xing, Peng-Fei Wang
Publikováno v:
Inorganics, Vol 11, Iss 10, p 397 (2023)
β-Ga2O3, with excellent bandgap, breakdown field, and thermal stability properties, is considered to be one of the most promising candidates for power devices including field-effect transistors (FETs) and for other applications such as Schottky barr
Externí odkaz:
https://doaj.org/article/6b03f77276124a78ab7b6be67b0e9922
Publikováno v:
Crystals, Vol 12, Iss 6, p 826 (2022)
AlGaN/GaN high electron mobility transistors (HEMTs) are regarded as promising candidates for a 5G communication system, which demands higher frequency and power. Source/drain ohmic contact is one of the key fabrication processes crucial to the devic
Externí odkaz:
https://doaj.org/article/04173fae405645d49e3b04d4015d1464
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 2, Pp 117-121 (2017)
In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (Vth) during switching was observed. This dynamic Vth behavior of SFG device is because of the special device struc
Externí odkaz:
https://doaj.org/article/a831ecc1659446f79d2fb4c50609e07e
Publikováno v:
Journal of Electronic Materials. 48:7076-7080
In this letter, we report the device characteristics of AlN/GaN MIS-HEMT on silicon substrate using thermal atomic-layer-deposition (ALD) ZrO2 with various thicknesses. The thermal ALD ZrO2 thin film is deposited at 250°C, which avoids plasma enhanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::384fd0084924dfb2060ed59e8b4ae5fe
https://doi.org/10.1007/s11664-019-07524-9
https://doi.org/10.1007/s11664-019-07524-9
Publikováno v:
Materials Science in Semiconductor Processing. 145:106646
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ceea1c4a1822276c41d101b79b00b1
https://doi.org/10.1016/j.mssp.2022.106646
https://doi.org/10.1016/j.mssp.2022.106646
Publikováno v:
IEEE Transactions on Electron Devices. 64:1385-1389
In this brief, a low-temperature microwave annealing (MWA) method is demonstrated for the formation of ohmic contact to AlN/GaN high electron mobility transistors (HEMTs) for the first time. Compared with the traditional rapid thermal annealing (RTA)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bc638cfbaf3d665d2550b9e7934abf6
https://doi.org/10.1109/ted.2017.2647963
https://doi.org/10.1109/ted.2017.2647963
Publikováno v:
Materials Science Forum. 815:8-13
A novel Ru thin film formation method was proposed to deposit metallic Ru thin films on TiN substrate for future backend of line process in semiconductor technologies. RuO2 thin films were first grown on TiN substrate by oxygen plasma-enhanced atomic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf00b1d157ad5482301d838b86f25de1
https://doi.org/10.4028/www.scientific.net/msf.815.8
https://doi.org/10.4028/www.scientific.net/msf.815.8
Publikováno v:
Applied Mechanics and Materials. :1940-1943
In this paper, through the analysis of emergency’s impact on passengers’ route choice, a passengers’ route choice model was found of urban rail transit net and based on the model to analysis the instance. Through comparative analysis the impact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a0ef52b17ca678d76e1109d1585b491
https://doi.org/10.4028/www.scientific.net/amm.587-589.1940
https://doi.org/10.4028/www.scientific.net/amm.587-589.1940
Autor:
Lin-Qing Zhang, Peng-Fei Wang
Publikováno v:
Applied Physics Express. 12:036501
This paper reports AlGaN/GaN HEMT with 20 nm LPCVD deposited SiN and 200 nm PECVD deposited SiCOH low-k passivation layer. The capacitance–voltage (C–V) measurement indicates that LPCVD deposited SiN results in a better interface quality compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a76a11431d88a9a753e212b13c389a6c
https://doi.org/10.7567/1882-0786/ab0139
https://doi.org/10.7567/1882-0786/ab0139
Autor:
Xiao-Yong Liu, Sheng-Xun Zhao, Hong-Fan Huang, Lin-Qing Zhang, David Wei Zhang, Jin-Shan Shi, Peng-Fei Wang
Publikováno v:
IEEE Electron Device Letters. 36:896-898
In this letter, a low-temperature microwave annealing (MWA) method is first reported for the formation of ohmic contact to AlGaN/GaN high electron mobility transistors (HEMTs). Compared with the traditional GaN devices annealed by rapid thermal annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d81df79567953c08b210bead054f343
https://doi.org/10.1109/led.2015.2461545
https://doi.org/10.1109/led.2015.2461545