Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Lin Kui-Xun"'
Publikováno v:
Chinese Physics Letters. 20:1879-1882
Polycrystalline silicon film was directly fabricated at 200°C by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power. The maximum crystallinity
Publikováno v:
Solar Energy Materials and Solar Cells. 62:187-192
The effect of hydrogen dilution was investigated on polycrystalline silicon formation using radio frequency excitation SiH4/ H2 plasma. The hydrogen dilution reduces the growth rate of the a-Si : H films. The dark conductivity of the a-Si : H films i
Publikováno v:
Chinese Physics Letters. 23:169-171
Radicals produced by the plasma enhanced chemistry vapour deposition technique in SiCl4 plasma are identified by mass spectrometry using our newly proposed straight-line fit method. Since flow rate is one of the most important parameters in depositin
Publikováno v:
Chinese Physics Letters. 22:904-906
A movable mass spectroscopy gas sampling apparatus has been established and a straight-line fit of silane depletion fraction f is proposed. The spatial density distributions of SiHn (n = 0?3) radicals in silane radio frequency glow discharge have bee
Publikováno v:
Chinese Physics Letters. 13:797-800
Semiconductor GaAs microcrystallites were embedded in SiO2 thin films by magnetron rf cosputtering technique. Structures of the thin films were characterized by transmission electron microscopy, x-ray diffraction and x-ray photoelectron microscopy. A
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
The stability of pc-Si films under long-time illumination was studied. The films were fabricated at low temperature of 250degC by plasma-enhanced chemical vapor deposition technology from SiCl4 /H2. The light soaking for 720 min in vacuum was carried
Publikováno v:
MRS Proceedings. 762
Electron energy distribution function (EEDF) is directly proportional to the second derivative of the probeI-Vcharacteristics. Because of an amplifying effect of unavoidable noises in the experimental probeI-Vcurves on the derivation process, the exp
Publikováno v:
Acta Physica Sinica. 55:2523
Polycrystalline silicon films were prepared from SiCl4 diluted with hydrogen by plasma-enhanced chemical vapor deposition at a low temperature of 250℃. The effect of hydrogen dilution on their structure and optical properties were investigated. It
Publikováno v:
Acta Physica Sinica. 54:3805
We have studied the stability of amorphous silicon and polycrystalline silicon films under illumination. These films are prepared by plasma-enhanced chemical vapor deposition technology from SiH4/H2 and SiCl4/H2 separately. The exp eriment indicates
Publikováno v:
Acta Physica Sinica. 53:1558