Zobrazeno 1 - 10
of 224
pro vyhledávání: '"Limmer, W"'
Autor:
Dreher, L., Bihler, C., Peiner, E., Waag, A., Schoch, W., Limmer, W., Goennenwein, S. T. B., Brandt, M. S.
A modeling approach for standing spin-wave resonances based on a finite-difference formulation of the Landau-Lifshitz-Gilbert equation is presented. In contrast to a previous study [Bihler et al., Phys. Rev. B 79, 045205 (2009)], this formalism accou
Externí odkaz:
http://arxiv.org/abs/1303.1192
Autor:
Czeschka, F. D., Dreher, L., Brandt, M. S., Weiler, M., Althammer, M., Imort, I. -M., Reiss, G., Thomas, A., Schoch, W., Limmer, W., Huebl, H., Gross, R., Goennenwein, S. T. B.
Publikováno v:
Phys. Rev. Lett. 107, 046601 (2011)
We systematically measured the DC voltage V_ISH induced by spin pumping together with the inverse spin Hall effect in ferromagnet/platinum bilayer films. In all our samples, comprising ferromagnetic 3d transition metals, Heusler compounds, ferrite sp
Externí odkaz:
http://arxiv.org/abs/1012.3017
Autor:
Dreher, L., Donhauser, D., Daeubler, J., Glunk, M., Rapp, C., Schoch, W., Sauer, R., Limmer, W.
Based on a detailed theoretical examination of the lattice distortion in high-index epilayers in terms of continuum mechanics, expressions are deduced that allow the calculation and experimental determination of the strain tensor for (hhl)-oriented (
Externí odkaz:
http://arxiv.org/abs/1002.2179
We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities sigma_{xx} ranging from the low- to the high-conductivity regime. The anomalous Hall conductivity sigma_{xy}^(AH) is extra
Externí odkaz:
http://arxiv.org/abs/0908.2935
Autor:
Glunk, M., Daeubler, J., Dreher, L., Schwaiger, S., Schoch, W., Sauer, R., Limmer, W., Brandlmaier, A., Goennenwein, S. T. B., Bihler, C., Brandt, M. S.
We present a systematic study on the influence of epitaxial strain and hole concentration on the magnetic anisotropy in (Ga,Mn)As at 4.2 K. The strain was gradually varied over a wide range from tensile to compressive by growing a series of (Ga,Mn)As
Externí odkaz:
http://arxiv.org/abs/0904.1565
Autor:
Bihler, C., Althammer, M., Brandlmaier, A., Gepraegs, S., Weiler, M., Opel, M., Schoch, W., Limmer, W., Gross, R., Brandt, M. S., Goennenwein, S. T. B.
Publikováno v:
Phys. Rev. B 78, 045203 (2008)
We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the
Externí odkaz:
http://arxiv.org/abs/0804.1336
The longitudinal and transverse resistivities of differently strained (Ga,Mn)As layers are theoretically and experimentally studied as a function of the magnetization orientation. The strain in the series of (Ga,Mn)As layers is gradually varied from
Externí odkaz:
http://arxiv.org/abs/0802.2635
A new type of (Ga,Mn)As microstructures with laterally confined electronic and magnetic properties has been realized by growing (Ga,Mn)As films on [1-10]-oriented ridge structures with (113)A sidewalls and (001) top layers prepared on GaAs(001) subst
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607685
Autor:
Limmer, W., Glunk, M., Daeubler, J., Hummel, T., Schoch, W., Sauer, R., Bihler, C., Huebl, H., Brandt, M. S., Goennenwein, S. T. B.
General expressions for the longitudinal and transverse resistivities of single-crystalline cubic and tetragonal ferromagnets are derived from a series expansion of the resistivity tensor with respect to the magnetization orientation. They are applie
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607679
We report on an experimental study of low temperature tunnelling in hybrid NbTiN/GaMnAs structures. The conductance measurements display a root mean square V dependence, consistent with the opening of a correlation gap in the density of states of GaM
Externí odkaz:
http://arxiv.org/abs/cond-mat/0605753