Zobrazeno 1 - 10
of 208
pro vyhledávání: '"Limburgs Universitair"'
Autor:
Garrett M. Fitzmaurice, Geert Molenberghs, Joseph G. Ibrahim, Stuart R. Lipsitz, Andrea B. Troxel, Michael Parzen, Limburgs Universitair
Publikováno v:
Journal of Data Science. 5:1-21
For longitudinal binary data with non-monotone non-ignorable missing outcomes over time, a full likelihood approach is complicated alge- braically, and maximum likelihood estimation can be computationally pro- hibitive with many times of follow-up. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b975f08dfaca144aeaa28e7a8bd7f68e
https://doi.org/10.6339/jds.2007.05(1).301
https://doi.org/10.6339/jds.2007.05(1).301
Autor:
Nicolas Barreau, Léo Choubrac, Sergiu Levcenko, Bart Vermang, Xeniya Kozina, Marcus Bär, Regan G. Wilks, Roberto Félix, Guy Brammertz, Sylvie Harel, Ludovic Arzel, Marc Meuris
Publikováno v:
ACS Applied Energy Materials
ACS Applied Energy Materials, ACS, 2020, 3 (6), pp.5830-5839. ⟨10.1021/acsaem.0c00763⟩
ACS Applied Energy Materials, ACS, 2020, 3 (6), pp.5830-5839. ⟨10.1021/acsaem.0c00763⟩
Current state-of-the-art Cu2ZnSn(S,Se)(4) kesterite solar cells are limited by low open-circuit voltages (V-OC). In order to evaluate to what extent the substitution of Sn by Ge is able to result in higher V oc values, this article focuses on Cu2ZnGe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b57ea972341364ec616472c6fe8a6a96
https://doi.org/10.1021/acsaem.0c00763
https://doi.org/10.1021/acsaem.0c00763
Autor:
Henk Vrielinck, Johan Lauwaert, Guy Brammertz, Maria Batuk, Sheng Yang, Dirk Poelman, Joke Hadermann, Kristiaan Neyts, Léo Choubrac, Bart Vermang, Nicolas Barreau, Samira Khelifi, Marc Meuris
Publikováno v:
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells, Elsevier, 2021, 219, pp.110824. ⟨10.1016/j.solmat.2020.110824⟩
Solar energy materials and solar cells
Solar Energy Materials and Solar Cells, Elsevier, 2021, 219, pp.110824. ⟨10.1016/j.solmat.2020.110824⟩
Solar energy materials and solar cells
Wide band gap thin-film kesterite solar cell based on non-toxic and earth-abundant materials might be a suitable candidate as a top cell for tandem configuration in combination with crystalline silicon as a bottom solar cell. For this purpose and bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72dded82c4b3633bc640ec781e11fda8
https://hal.archives-ouvertes.fr/hal-03079064
https://hal.archives-ouvertes.fr/hal-03079064
Autor:
Dietmar Leinen, Fernando Lloret, G. Alba, Etienne Gheeraert, Julien Pernot, Marina Gutierrez, David Eon, Daniel Araujo, J. Cañas
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2021, 535, pp.146301. ⟨10.1016/j.apsusc.2020.146301⟩
Applied Surface Science, Elsevier, 2021, 535, pp.146301. ⟨10.1016/j.apsusc.2020.146301⟩
γ-Alumina is a promising candidate for fabricating the gate of the diamond metal oxide semiconductor field effect transistor based on oxygen termination due to its high bandgap of 6.7 eV and high static dielectric constant of 9. Besides these proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::379eb3b315eaccc6b5cd4154c1ae011f
https://hal.archives-ouvertes.fr/hal-03167438
https://hal.archives-ouvertes.fr/hal-03167438
Publikováno v:
physica status solidi (a)
physica status solidi (a), Wiley, 2011, 208 (9), pp.2038-2044. ⟨10.1002/pssa.201100039⟩
physica status solidi (a), Wiley, 2011, 208 (9), pp.2038-2044. ⟨10.1002/pssa.201100039⟩
International audience; Single crystal diamond grown by chemical vapor deposition (CVD) sometimes exhibits strain induced birefringence arising from bundles of dislocations lying almost parallel to the [001] growth axis. Some of these specific birefr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d833feeeaeae8d083be1017666eb10c6
https://hal.archives-ouvertes.fr/hal-00640179
https://hal.archives-ouvertes.fr/hal-00640179
Autor:
Kok Wai Cheah, Vladimir Skarka, Mohammed Guendouz, C. Simos, P. Nguyen, P. Le Rendu, P. Joubert, Thien-Phap Nguyen, M. de Kok
Publikováno v:
Physica Status Solidi C-Current Topics in Solid State Physics
Porous Semiconductors-Science and Technology 4th international conference (PSST 2004)
Porous Semiconductors-Science and Technology 4th international conference (PSST 2004), Mar 2004, Cullera-Valencia, Spain. pp.3222-3226, ⟨10.1002/pssc.200461123⟩
Porous Semiconductors-Science and Technology 4th international conference (PSST 2004)
Porous Semiconductors-Science and Technology 4th international conference (PSST 2004), Mar 2004, Cullera-Valencia, Spain. pp.3222-3226, ⟨10.1002/pssc.200461123⟩
oral session 6 " Novel Forms & Structures " [O-28]; International audience; We present a new technique to fill porous silicon layers of 5 µm thick with poly(p phenylene vinylene) (PPV), a polymer having high nonlinear coefficient in view of preparin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8aa5853db74d7b4cd232d498c4a120d
https://hal.archives-ouvertes.fr/hal-00153792
https://hal.archives-ouvertes.fr/hal-00153792
Autor:
Satoshi Koizumi, Etienne Bustarret, Milos Nesladek, A. Tajani, Bernadette Marcus, Michel Mermoux, Etienne Gheeraert
Publikováno v:
Diamond and Related Materials
Diamond and Related Materials, Elsevier, 2004, 13 (4-8), pp. 886-890. ⟨10.1016/j.diamond.2003.12.002⟩
Diamond and Related Materials, Elsevier, 2004, 13 (4-8), pp. 886-890. ⟨10.1016/j.diamond.2003.12.002⟩
International audience; High-resolution confocal micro-Raman spectra show that for homoepitaxial growth on ‹111›-oriented surfaces the zone-center phonon peak of the epilayers may occur a few cm-1 below the peak of the relaxed diamond. This indic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e206fcb0ed11b5beb963e5499f15c659
https://hal.archives-ouvertes.fr/hal-00417861
https://hal.archives-ouvertes.fr/hal-00417861
Autor:
M. de Kok, J.P. Bardeau, Dirk Vanderzande, M Lakehal, P Le Rendu, Pierre-Yves Joubert, Thien-Phap Nguyen, A. Bulou
Publikováno v:
Physica Status Solidi A-Applications and Materials Science " Proceedings of the 3rd International Conference Porous Semiconductors-Science and Technology "
Porous Semiconductors-Science and Technology 3th international conference (PSST 2002), 11-15 march 2002
Porous Semiconductors-Science and Technology 3th international conference (PSST 2002), 11-15 march 2002, May 2003, Puerto de la Cruz, Tenerife Island, Spain. pp.232-235, ⟨10.1002/pssa.200306506⟩
Porous Semiconductors-Science and Technology 3th international conference (PSST 2002), 11-15 march 2002
Porous Semiconductors-Science and Technology 3th international conference (PSST 2002), 11-15 march 2002, May 2003, Puerto de la Cruz, Tenerife Island, Spain. pp.232-235, ⟨10.1002/pssa.200306506⟩
poster session 1 " Formation and characterisation " [P1-43]; International audience; We have investigated hybrid organic-inorganic systems composed of silicon-porous silicon and poly(phenylene vinylene) (PPV) in order to fabricate new light emitting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c7700f7ee621d48cd793799567add6e
https://hal.science/hal-00151983
https://hal.science/hal-00151983
Autor:
Keilegom, I., Noel Veraverbeke
Publikováno v:
Bernoulli 8, no. 5 (2002), 607-625
Publons
Publons
Let (X, Y ) be a random vector, where Y denotes the variable of interest, possibly subject to random right censoring, and X is a covariate. Consider a heteroscedastic model Y = m(X) + σ(X)ε, where the error term ε is independent of X and m(X) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::508fd04e9bc04a79a7d2f46b40147b71
http://projecteuclid.org/euclid.bj/1078435220
http://projecteuclid.org/euclid.bj/1078435220