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pro vyhledávání: '"Lima, I. C. Da Cunha"'
Akademický článek
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We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity band dete
Externí odkaz:
http://arxiv.org/abs/1011.1006
Akademický článek
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Publikováno v:
Appl. Phys. Lett. 93, 112110 (2008)
The interplay between disorder and spin polarization in a GaMnAs thin layer results into spin-polarized impurity hole bands. A figure of merit is defined to label the hole state as being extended or localized. The calculation leads to a phase diagram
Externí odkaz:
http://arxiv.org/abs/0806.3423
A self-consistent calculation of the density of states and the spectral density function is performed in a two-dimensional spin-polarized hole system based on a multiple-scattering approximation. Using parameters corresponding to GaMnAs thin layers,
Externí odkaz:
http://arxiv.org/abs/cond-mat/0702053
Publikováno v:
Phys. Rev. B 75, 205328 (2007).
Aiming at the optimization of the spin diffusion length in (001) GaAs quantum wells, we explore the effect of the anisotropy of the spin-orbit coupling on the competition between the Rashba and the Dresselhaus spin-orbit couplings by solving the kine
Externí odkaz:
http://arxiv.org/abs/cond-mat/0701762
Publikováno v:
Phye. Lett. A 365, 501 (2007).
We investigate the spin relaxation and spin dephasing of $n$-type GaAs quantum wells. We obtain the spin relaxation time $T_1$, the spin dephasing time $T_2$ and the ensemble spin dephasing time $T_2^{\ast}$ by solving the full microscopic kinetic sp
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610501
Autor:
Oliveira, E. J. R., Lima, A. T. da Cunha, Boselli, M. A., Sipahi, G. M., Rodrigues, S. C. P., Lima, I. C. da Cunha
The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility,
Externí odkaz:
http://arxiv.org/abs/cond-mat/0610275
Autor:
Rodrigues, S. C. P., Scolfaro, L. M. R., Leite, J. R., Lima, I. C. da Cunha, Sipahi, G. M., Boselli, M. A.
A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration (considere
Externí odkaz:
http://arxiv.org/abs/cond-mat/0407331
The magnetic order resulting from an indirect exchange between magnetic moments provided by spin-polarized hole gas in the metallic phase of a GaMnAs double layer structure is studied via Monte Carlo simulation. The coupling mechanism involves a pert
Externí odkaz:
http://arxiv.org/abs/cond-mat/0212484