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pro vyhledávání: '"Lim, Yong Sik"'
We present a laser scanning reflection-matrix microscopy combining the scanning of laser focus and the wide-field mapping of the electric field of the backscattered waves for eliminating higher-order aberrations even in the presence of strong multipl
Externí odkaz:
http://arxiv.org/abs/1910.04681
Femtosecond-scale ultrafast imaging is an essential tool for visualizing ultrafast dynamics in molecular biology, physical chemistry, atomic physics, and fluid dynamics. Pump-probe imaging and a streak camera are the most widely used techniques, but
Externí odkaz:
http://arxiv.org/abs/1909.00499
Autor:
Jeong, Seungwon, Lee, Ye-Ryoung, Kang, Sungsam, Choi, Wonjun, Hong, Jin Hee, Park, Jin-Sung, Lim, Yong-Sik, Park, Hong-Gyu, Choi, Wonshik
The efficient delivery of light energy is a prerequisite for non-invasive imaging and stimulating of target objects embedded deep within a scattering medium. However, injected waves experience random diffusion by multiple light scattering, and only a
Externí odkaz:
http://arxiv.org/abs/1709.09337
Autor:
Kim, Hyun-Tak, Lee, Yong-Wook, Kim, Bong-Jun, Chae, Byung-Gyu, Yun, Sun Jin, Kang, Kwang-Yong, Han, Kang-Jeon, Yee, Ki-Ju, Lim, Yong-Sik
Publikováno v:
Phys. Rev. Lett. 97, 266401 (2006)
In femtosecond pump-probe measurements, the appearance of coherent phonon oscillations at 4.5 THz and 6.0 THz indicating the rutile metal phase of VO_2 does not occur simultaneously with the first-order metal-insulator transition (MIT) near 68^oC. Th
Externí odkaz:
http://arxiv.org/abs/cond-mat/0608085
An abrupt first-order metal-insulator transition (MIT) as a jump of the density of states is observed for Be doped GaAs, which is known as a semiconductor, by inducing very low holes of approximately n_p=5x10^{14} cm^{-3} into the valence band by the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0411328
Autor:
Lim, Yong-Sik, Kim, Hyun-Tak, Chae, B. G., Youn, D. H., Kim, K. O., Kang, K. Y., Lee, S. J., Kim, K.
Publikováno v:
Appl. Phys. Lett. 86, 242101 (2005)
An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator VO_2 based tw
Externí odkaz:
http://arxiv.org/abs/cond-mat/0402485
Akademický článek
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Akademický článek
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Autor:
Han, Man Hyeop, Jegal, Jong Pil, Park, Ki Wan, Choi, Jai Hyuk, Baik, Hong Koo, Noh, Joo Hyon, Song, Kie Moon, Lim, Yong Sik
Publikováno v:
In Surface & Coatings Technology 2007 201(9):4948-4952
Publikováno v:
In Journal of Crystal Growth 2007 301:252-255