Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Lim, Wei Yi"'
Autor:
Earl Gow, Kangho Lee, Lim Wei Yi, Ta-Chien Cheng, Eva Wai Leong Ching, Lim Teck Guan, Jason Janesky
Publikováno v:
2018 IEEE 20th Electronics Packaging Technology Conference (EPTC).
A magnetic shield was developed for the standard BGA MRAM DDRS chip to increase the magnetic interference tolerance from 100}}oe to more than 500 oetextbf{{. This enabled the low power and fast speed MRAM devices to operate in more rugged conditions.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c803d7167f2c043d2880f8d550eadc6a
https://doi.org/10.1109/eptc.2018.8654329
https://doi.org/10.1109/eptc.2018.8654329
Autor:
Boo Yang Jung, Lim Wei Yi, Danny Pak-Chum Shum, Lim Teck Guan, Juan Boon Tan, Yi Wanbing, Bharat Bhushan, Francis Poh, Eva Wai Leong Ching
Publikováno v:
2018 IEEE International Memory Workshop (IMW).
We present the first magnetic shielding study including design, modeling, fabrication and characterization of package level magnetic shield for perpendicular spin-transfer torque magneto resistive random-access memory (STT-MRAM). Magnetic shielding i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ebd8aedea6b52077af8a3330e9c1e3e
https://doi.org/10.1109/imw.2018.8388828
https://doi.org/10.1109/imw.2018.8388828
Publikováno v:
A-SSCC
A narrowband low-power low-sensitivity, IoT TxRx compliant to ARIB STD-T-67 & T-30, is presented. It employs (1) an injection locked IQ-divider without power-hungry high speed logic gates and flip flops to generate 25% duty cycle LO that drives the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afba15e3610dff6e1c057deb709da226
https://doi.org/10.1109/asscc.2017.8240247
https://doi.org/10.1109/asscc.2017.8240247
Publikováno v:
IEEE Electron Device Letters. 34:18-20
Electrical evaluation of the impact of through-silicon via (TSV)-induced stress on 65-nm MOSFETs is presented in this letter. MOSFETs with varying widths and lengths were laid out at a minimum distance of 1.2 up to 16 μm from TSVs at different orien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e6dd94241fec2ecb6bc29e264b0a3cc
https://doi.org/10.1109/led.2012.2228158
https://doi.org/10.1109/led.2012.2228158
In this paper, the design of wide-swing constant transconductance (gm) bias circuit that generates bias voltage for low-noise amplifier (LNA) circuit design by using an off-chip resistor is demonstrated. The overall transconductance (Gm) generated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d10f1df79349999ee919e9ccb3a2615
Autor:
Lim, Wei Yi, Chang, Ka Fai, Raja, M. Kumarasamy, Low, Seow Meng, Goh, Jason, Arasu, M. Annamalai
Publikováno v:
2015 IEEE 17th Electronics Packaging & Technology Conference (EPTC); 1/1/2015, p1-4, 4p
Publikováno v:
2014 International Symposium on Integrated Circuits (ISIC); 2014, p540-543, 4p
Publikováno v:
Wall Street Journal - Eastern Edition. 9/16/2008, Vol. 252 Issue 65, pB7. 0p.
Autor:
Lim, Wei Yi
Publikováno v:
Wall Street Journal - Eastern Edition. 3/31/2008, Vol. 251 Issue 75, pC6. 0p. 1 Black and White Photograph, 1 Graph.
Publikováno v:
Wall Street Journal - Eastern Edition. 1/9/2008, Vol. 251 Issue 7, pA4. 0p. 1 Graph.