Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Lim, Way Soong"'
Publikováno v:
Journal of Big Data, Vol 11, Iss 1, Pp 1-54 (2024)
Abstract In the current industrial landscape, a significant number of sectors are grappling with the challenges posed by unstructured data, which incurs financial losses amounting to millions annually. If harnessed effectively, this data has the pote
Externí odkaz:
https://doaj.org/article/0d4c356a3cd8474cb6766b0091ac80b2
Publikováno v:
Journal of Engineering Technology and Applied Physics, Vol 4, Iss 1, Pp 35-39 (2022)
Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDDon the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall power consumption
Externí odkaz:
https://doaj.org/article/4b4cee5f8a4748769e57af76e25e28e3
Publikováno v:
Sensors, Vol 23, Iss 11, p 5095 (2023)
The need for power-efficient devices, such as smart sensor nodes, mobile devices, and portable digital gadgets, is markedly increasing and these devices are becoming commonly used in daily life. These devices continue to demand an energy-efficient ca
Externí odkaz:
https://doaj.org/article/2e8dec43e1274aea95f1026b5cbe29ea
Autor:
Pramunendar, Ricardus Anggi, Andono, Pulung Nurtantio, Shidik, Guruh Fajar, Megantara, Rama Aria, Pergiwati, Dewi, Prabowo, Dwi Puji, Sari, Yuslena, Lim Way Soong
Publikováno v:
International Journal of Intelligent Engineering & Systems; 2023, Vol. 16 Issue 6, p695-705, 11p
Publikováno v:
Computers, Materials & Continua. 72:3425-3446
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c1761bce48dc4ce580f440179a9d686
https://doi.org/10.32604/cmc.2022.023452
https://doi.org/10.32604/cmc.2022.023452
Publikováno v:
International Journal of Robotics and Automation Technology. 8:83-89
Since, Dual Metal Gate (DMG) technology alone is not enough to rectify the problem of low ON current and large ambipolar current in the TFET, therefore, a novel TFET structure, known as dual metal triple-gate-dielectric (DM_TGD) TFET, has been propos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07024ba00c96de9788b945a7f892aed2
https://doi.org/10.31875/2409-9694.2021.08.8
https://doi.org/10.31875/2409-9694.2021.08.8
Publikováno v:
In Procedia Technology 2013 11:4-10
Publikováno v:
Special Issue No.1. 1:56-63
With the advent of technology there are plenty of blended learning tools available for us to use in teaching and training activity. Selecting appropriate tools for a particular category of students and the nature of the subject being taught is import
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cb0526c1a37e7dc48bc9bc7ce962ad5
https://doi.org/10.33093/ijcm.2020.1.x1.5
https://doi.org/10.33093/ijcm.2020.1.x1.5
Drain current model for a hetero‐dielectric single gate tunnel field effect transistor ( HDSG TFET )
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 35
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2b39727d47916bc7ef92e3e292cb190
https://doi.org/10.1002/jnm.2980
https://doi.org/10.1002/jnm.2980
Publikováno v:
In Neurocomputing 2010 74(1):164-177