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Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
As extreme ultraviolet lithography (EUVL) technology progresses towards and below sub-7nm generations, polarization effects will begin to have an impact. Moving to higher NA will introduce polarization effects at all locations: the mask plane, the op
Autor:
Bruce W. Smith, Lilian Neim
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019.
As the extreme ultraviolet (EUV) lithography technology progresses towards and below sub-7nm generations, polarization effects will begin to have an impact. As numerical apertures increase, the consequences at both the mask and the wafer plane need t