Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Lilian K. Casias"'
Autor:
Elias B. Frantz, Christian P. Morath, Michael P. Short, Julie V. Logan, Preston T. Webster, Lilian K. Casias
Publikováno v:
Materials Advances. 1:45-53
As the potential applications of GaN and Ga2O3 are limited by the inadequacy of conventional doping techniques, specifically when uniform selective area p-type doping is required, the potential for transmutation doping of these materials is analyzed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75ec673d8040898168ae37c62f4ea515
https://doi.org/10.1039/d0ma00017e
https://doi.org/10.1039/d0ma00017e
Autor:
Elizabeth H. Steenbergen, Sanjay Krishna, Gilberto A. Umana-Membreno, Lorenzo Faraone, Jin K. Kim, Ganesh Balakrishnan, Christian P. Morath, Preston T. Webster, Lilian K. Casias, Julie V. Logan
Publikováno v:
Applied Physics Letters. 116:182109
Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertical direction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27b306b567a87d2126d7bbc0e98df25d
https://doi.org/10.1063/1.5144079
https://doi.org/10.1063/1.5144079
Autor:
Preston T. Webster, Jin K. Kim, Lilian K. Casias, Christian P. Morath, Elizabeth H. Steenbergen, Sanjay Krishna, Ganesh Balakrishnan, Vincent M. Cowan
Publikováno v:
Infrared Technology and Applications XLIV.
Accurate p-type doping of the active region in III-V infrared detectors is essential for optimizing the detector design and overall performance. While most III-V detector absorbers are n-type (e.g., nBn), the minority carrier devices with p-type abso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6948521f2356e8deabf3ce71c334c02
https://doi.org/10.1117/12.2305431
https://doi.org/10.1117/12.2305431
Autor:
Brianna Klein, Zhaobing Tian, Sen Mathews, C. Kadlec, Elena Plis, T. Schuler-Sandy, S.A. Myers, Sanjay Krishna, Lilian K. Casias
Publikováno v:
Journal of Crystal Growth. 425:29-32
In order to improve the stability and repeatability of the growth of InAs–InAsSb (Ga-free) superlattices (SLs), we have investigated the use of an InAs–InSb digital alloy in place of the InAsSb ternary material. We report on a PIN structure made
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26d70017227316bd78b9c2dceb09e63a
https://doi.org/10.1016/j.jcrysgro.2015.02.096
https://doi.org/10.1016/j.jcrysgro.2015.02.096
Autor:
Sanjay Krishna, Elena Plis, S. Maji, A. Jamus, M. N. Kutty, Lilian K. Casias, Kateryna Artyushkova, Brianna Klein
Publikováno v:
Infrared Physics & Technology. 70:66-69
XPS characterization was used to determine the surface chemistry of a mid-wave infrared T2SL treated by both an HCl-based and an H 3 PO 4 -based etching solution. This analysis, performed over both the etched and unetched portions of the sample, reve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80bd943e25f686cd30d82bd7f9a3fd94
https://doi.org/10.1016/j.infrared.2014.10.010
https://doi.org/10.1016/j.infrared.2014.10.010
Autor:
Leonid Chernyak, Stephen Myers, Lilian K. Casias, Sanjay Krishna, Elena Flitsiyan, Jonathan Lee, Alireza Kazemi, Robert E. Peale, Zahra Taghipour, Chris J. Fredricksen
Publikováno v:
Journal of Applied Physics. 123:235104
The minority carrier diffusion length was directly measured by the variable-temperature Electron Beam-Induced Current technique in InAs/GaSb type-II strain-layer-superlattice infrared-detector structures. The Molecular Beam Epitaxy-grown midwave infr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b31155b1bde865f53abce5209211179
https://doi.org/10.1063/1.5030444
https://doi.org/10.1063/1.5030444