Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Likuan, Ma"'
Autor:
Xiaokun Yang, Rui He, Zheyi Lu, Yang Chen, Liting Liu, Donglin Lu, Likuan Ma, Quanyang Tao, Lingan Kong, Zhaojing Xiao, Songlong Liu, Zhiwei Li, Shuimei Ding, Xiao Liu, Yunxin Li, Yiliu Wang, Lei Liao, Yuan Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Vertical field effect transistor (VFET), in which the semiconductor is sandwiched between source/drain electrodes and the channel length is simply determined by the semiconductor thickness, has demonstrated promising potential for short chan
Externí odkaz:
https://doaj.org/article/db56dc617f354ee586a485b14f82bb5b
Autor:
Quanyang Tao, Ruixia Wu, Xuming Zou, Yang Chen, Wanying Li, Zheyi Lu, Likuan Ma, Lingan Kong, Donglin Lu, Xiaokun Yang, Wenjing Song, Wei Li, Liting Liu, Shuimei Ding, Xiao Liu, Xidong Duan, Lei Liao, Yuan Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract Vertical transistors, in which the source and drain are aligned vertically and the current flow is normal to the wafer surface, have attracted considerable attention recently. However, the realization of high-density vertical transistors is
Externí odkaz:
https://doaj.org/article/2b376f5b70c0402dbf56eb9f9b7462cb
Autor:
Liting Liu, Yang Chen, Long Chen, Biao Xie, Guoli Li, Lingan Kong, Quanyang Tao, Zhiwei Li, Xiaokun Yang, Zheyi Lu, Likuan Ma, Donglin Lu, Xiangdong Yang, Yuan Liu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract Two-dimensional (2D) semiconductors hold great promises for ultra-scaled transistors. In particular, the gate length of MoS2 transistor has been scaled to 1 nm and 0.3 nm using single wall carbon nanotube and graphene, respectively. However,
Externí odkaz:
https://doaj.org/article/cc72ab878cee422a8acaf98770c89b8d
Autor:
Zheyi Lu, Yang Chen, Weiqi Dang, Lingan Kong, Quanyang Tao, Likuan Ma, Donglin Lu, Liting Liu, Wanying Li, Zhiwei Li, Xiao Liu, Yiliu Wang, Xidong Duan, Lei Liao, Yuan Liu
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract The practical application of two-dimensional (2D) semiconductors for high-performance electronics requires the integration with large-scale and high-quality dielectrics—which however have been challenging to deposit to date, owing to their
Externí odkaz:
https://doaj.org/article/c45e145e5ff74814a2f22b95b9a5e354
Autor:
Lingan Kong, Ruixia Wu, Yang Chen, Ying Huangfu, Liting Liu, Wei Li, Donglin Lu, Quanyang Tao, Wenjing Song, Wanying Li, Zheyi Lu, Xiao Liu, Yunxin Li, Zhiwei Li, Wei Tong, Shuimei Ding, Songlong Liu, Likuan Ma, Liwang Ren, Yiliu Wang, Lei Liao, Xidong Duan, Yuan Liu
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Laminated van der Waals (vdW) metallic electrodes can improve the contact of 2D electronic devices, but their scalability is usually limited by the transfer process. Here, the authors report a strategy to deposit vdW contacts onto various 2D and 3D s
Externí odkaz:
https://doaj.org/article/8f423baac9f44241b7e3d6e6190d8554
Autor:
Zhaojing Xiao, Liting Liu, Yang Chen, Zheyi Lu, Xiaokun Yang, Zhenqi Gong, Wanying Li, Lingan Kong, Shuimei Ding, Zhiwei Li, Donglin Lu, Likuan Ma, Songlong Liu, Xiao Liu, Yuan Liu
Publikováno v:
Advanced Science, Vol 10, Iss 29, Pp n/a-n/a (2023)
Abstract Vertical field effect transistors (VFETs) have attracted considerable interest for developing ultra‐scaled devices. In particular, individual VFET can be stacked on top of another and does not consume additional chip footprint beyond what
Externí odkaz:
https://doaj.org/article/840d01a59d0647c7b2b4e008874ea200
Autor:
Zhiwei Li, Yang Chen, Songlong Liu, Wanying Li, Liting Liu, Wenjing Song, Donglin Lu, Likuan Ma, Xiangdong Yang, Zhengdao Xie, Xidong Duan, Zeyu Yang, Yiliu Wang, Lei Liao, Yuan Liu
Publikováno v:
ACS nano. 16(8)
Two-dimensional (2D) materials have demonstrated promising potential for flexible electronics, owning to their atomic thin body thickness and dangling-bond-free surface. Here, we report a sliding contact device structure for efficient strain releasin
Autor:
Likuan Ma, Liting Liu, Zheyi Lu, Yang Chen, Lingan Kong, Quanyang Tao, Zhiwei Li, Wanying Li, Wenjing Song, Donglin Lu, Lei Liao, Yuan Liu
Publikováno v:
Physical Review Applied. 17
Autor:
Donglin, Lu, Yang, Chen, Lingan, Kong, Chaobo, Luo, Zheyi, Lu, Quanyang, Tao, Wenjing, Song, Likuan, Ma, Zhiwei, Li, Wanying, Li, Liting, Liu, Qianyuan, Li, Xiangdong, Yang, Jun, Li, Jia, Li, Xidong, Duan, Lei, Liao, Yuan, Liu
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 18(14)
2D Semiconductors are promising in the development of next-generation photodetectors. However, the performances of 2D photodetectors are largely limited by their poor light absorption (due to ultrathin thickness) and small detection range (due to lar
Autor:
Naizhou, Wang, Huaibao, Tang, Mengzhu, Shi, Hui, Zhang, Weizhuang, Zhuo, Dayong, Liu, Fanbao, Meng, Likuan, Ma, Jianjun, Ying, Liangjian, Zou, Zhe, Sun, Xianhui, Chen
Publikováno v:
Journal of the American Chemical Society. 141(43)
Magnetism in the two-dimensional limit has become an intriguing topic for exploring new physical phenomena and potential applications. Especially, the two-dimensional magnetism is often associated with novel intrinsic spin fluctuations and versatile