Zobrazeno 1 - 10
of 133
pro vyhledávání: '"Likharev, Konstantin K."'
We have calculated the key characteristics of associative (content-addressable) spatial-temporal memories based on neuromorphic networks with restricted connectivity - "CrossNets". Such networks may be naturally implemented in nanoelectronic hardware
Externí odkaz:
http://arxiv.org/abs/1707.03855
Autor:
Prezioso, Mirko, Merrikh-Bayat, Farnood, Hoskins, Brian, Adam, Gina, Likharev, Konstantin K., Strukov, Dmitri B.
Publikováno v:
Nature, vol. 521, pp. 61-64, 2015
Despite all the progress of semiconductor integrated circuit technology, the extreme complexity of the human cerebral cortex makes the hardware implementation of neuromorphic networks with a comparable number of devices exceptionally challenging. One
Externí odkaz:
http://arxiv.org/abs/1412.0611
We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving as a singl
Externí odkaz:
http://arxiv.org/abs/1210.5253
We have studied resistive bistability (memory) effects in junctions based on metal oxides, with a focus on sample-to-sample reproducibility which is necessary for the use of such junctions as crosspoint devices of hybrid CMOS/nanoelectronic circuits.
Externí odkaz:
http://arxiv.org/abs/1002.2650
Publikováno v:
J. Phys.: Condens. Matter 18 (2006) 4895-4905
We have extended Monte Carlo simulations of hopping transport in completely disordered 2D conductors to the process of external charge relaxation. In this situation, a conductor of area $L \times W$ shunts an external capacitor $C$ with initial charg
Externí odkaz:
http://arxiv.org/abs/cond-mat/0512568
We have carried out numerical simulations of shot noise in 2D arrays of single-electron islands with random background charges. The results show that in contrast with the 1D arrays, at low currents the current noise is strongly colored, and its spect
Externí odkaz:
http://arxiv.org/abs/cond-mat/0303477
We have used modern supercomputer facilities to carry out extensive numerical simulations of statistical properties of 1D and 2D arrays of single-electron islands with random background charges, in the limit of small island self-capacitance. In parti
Externí odkaz:
http://arxiv.org/abs/cond-mat/0303439
We have developed a method for calculation of quantum fluctuation effects, in particular of the uncertainty zone developing at the potential curvature sign inversion, for a damped harmonic oscillator with arbitrary time dependence of frequency and fo
Externí odkaz:
http://arxiv.org/abs/quant-ph/0207082