Zobrazeno 1 - 10
of 158
pro vyhledávání: '"Likharev, K."'
We have designed, fabricated, and successfully tested a prototype mixed-signal, 28x28-binary-input, 10-output, 3-layer neuromorphic network ("MLP perceptron"). It is based on embedded nonvolatile floating-gate cell arrays redesigned from a commercial
Externí odkaz:
http://arxiv.org/abs/1610.02091
Publikováno v:
Nature Scientific Reports 6, art. 21331, Jan. 2016
Metal-oxide memristors have emerged as promising candidates for hardware implementation of artificial synapses - the key components of high-performance, analog neuromorphic networks - due to their excellent scaling prospects. Since some advanced cogn
Externí odkaz:
http://arxiv.org/abs/1505.05549
Publikováno v:
Proc. ISCAS'15, Lisbon, Portugal, May 2015, pp. 1921-1924
We have modified a commercial NOR flash memory array to enable high-precision tuning of individual floating-gate cells for analog computing applications. The modified array area per cell in a 180 nm process is about 1.5 um^2. While this area is appro
Externí odkaz:
http://arxiv.org/abs/1410.4781
Autor:
Likharev, K. -K.
Publikováno v:
Dans European Nano Systems Worshop - ENS 2005, Paris : France (2005)
This report is a brief review of the recent work on architectures for the prospective hybrid CMOS/nanowire/ nanodevice ("CMOL") circuits including digital memories, reconfigurable Boolean-logic circuits, and mixed-signal neuromorphic networks. The ba
Externí odkaz:
http://arxiv.org/abs/0708.1834
Publikováno v:
J. Phys.: Condens. Matter 18 (2006) 2013-2027
We have extended our supercomputer-enabled Monte Carlo simulations of hopping transport in completely disordered 2D conductors to the case of substantial electron-electron Coulomb interaction. Such interaction may not only suppress the average value
Externí odkaz:
http://arxiv.org/abs/cond-mat/0412209
Autor:
Cimpoiasu, E., Tolpygo, S. K., Liu, X., Simonian, N., Lukens, J. E., Klie, R. F., Zhu, Y., Likharev, K. K.
Publikováno v:
J. Appl. Phys., vol. 96, no. 2, pp. 1088 -1093, Jul 2004
We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temper
Externí odkaz:
http://arxiv.org/abs/cond-mat/0402092
Publikováno v:
J. Phys.: Condens. Matter 18 (2006) 1999-2012
We have used modern supercomputer facilities to carry out extensive Monte Carlo simulations of 2D hopping (at negligible Coulomb interaction) in conductors with the completely random distribution of localized sites in both space and energy, within a
Externí odkaz:
http://arxiv.org/abs/cond-mat/0302445
We report the observation of the universal distribution of transparencies, predicted by Schep and Bauer [Phys. Rev. Lett. {\bf 78}, 3015 (1997)] for dirty sharp interfaces, in uniform Nb/AlO$_x$/Nb junctions with high specific conductance ($10^8$ Ohm
Externí odkaz:
http://arxiv.org/abs/cond-mat/0006153
Autor:
Naveh, Y., Likharev, K. K.
We have performed numerical modeling of dual-gate ballistic n-MOSFET's with channel length of the order of 10 nm, including the effects of quantum tunneling along the channel and through the gate oxide. Our analysis includes a self-consistent solutio
Externí odkaz:
http://arxiv.org/abs/cond-mat/9910258
Publikováno v:
Phys. Rev. B 60, R2169 (1999)
We have derived a general formula describing current noise in multimode ballistic channels connecting source and drain electrodes with Fermi electron gas. In particular (at $eV\gg k_{B}T$), the expression describes the nonequilibrium ''shot'' noise,
Externí odkaz:
http://arxiv.org/abs/cond-mat/9812210