Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Lih-Wen Laih"'
Publikováno v:
IEEE Transactions on Electron Devices. 49:1129-1135
In this paper, we report the fabrication and characterization of 1.3-/spl mu/m AlGaInAs/AlGaInAs laser diodes (LDs) with an n-type modulation-doped strain-compensated multiple-quantum-well (MD-SC-MQW) active region and a linearly graded index separat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6381cf9c8b25ef3be52c33d941f736
https://doi.org/10.1109/ted.2002.1013267
https://doi.org/10.1109/ted.2002.1013267
Publikováno v:
IEEE Transactions on Electron Devices. 48:1054-1059
Two InGaP/GaAs resonant tunneling bipolar transistors (RTBTs) with different superlattice (SL) structures in the emitters are fabricated and studied. The uniform and modulated widths of barriers are respectively utilized in the specific SL structures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d615ab10297fea0d5789a2f53466ab54
https://doi.org/10.1109/16.925225
https://doi.org/10.1109/16.925225
Autor:
Kuo-Hui Yu, Hsi-Jen Pan, Cheng-Zu Wu, Wei-Chou Wang, Lih-Wen Laih, Kun-Wei Lin, S.C. Feng, Wen-Chau Liu
Publikováno v:
Solid-State Electronics. 45:489-494
An interesting InGaP/GaAs resonant-tunneling heterojunction bipolar transistor incorporating a superlattice (SL) structure in the emitter has been fabricated and studied. With the n-type doped well, the strongly coupling effect dominating the biased
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2632a18808de689c625881c7d2c1de47
https://doi.org/10.1016/s0038-1101(01)00028-4
https://doi.org/10.1016/s0038-1101(01)00028-4
Autor:
Cheng-Zu Wu, Kun-Wei Lin, Wei-Chou Wang, Shiou-Ying Cheng, Lih-Wen Laih, Kuo-Hui Yu, Wen-Chau Liu, Hsi-Jen Pan
Publikováno v:
Superlattices and Microstructures. 29:111-119
An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlatti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6ddb40866081e4864d779e8d04dbf84
https://doi.org/10.1006/spmi.2000.0960
https://doi.org/10.1006/spmi.2000.0960
Autor:
Kuo-Hui Yu, Kun-Wei Lin, Shiou-Ying Cheng, Wei-Chou Wang, Lih-Wen Laih, Hsi-Jen Pan, Chin-Chuan Cheng, Wen-Chau Liu, Kong-Beng Thei
Publikováno v:
Semiconductor Science and Technology. 15:935-940
The temperature-dependent characteristics of an InP/InGaAs superlattice-emitter resonant-tunnelling bipolar transistor have been studied and demonstrated. Due to the use of a five-period InP/InGaAs superlattice, the RT effect is observed at cryogenic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0907242e87f431723b14d1d22c22a9f7
https://doi.org/10.1088/0268-1242/15/9/311
https://doi.org/10.1088/0268-1242/15/9/311
Autor:
Kun-Wei Lin, Wei-Chou Wang, Wen-Lung Chang, Hsi-Jen Pan, Lih-Wen Laih, Kuo-Hui Yu, Chin-Chuan Chang, Wen-Chau Liu
Publikováno v:
Superlattices and Microstructures. 26:343-350
An i-InGaP/n-In x Ga 1 − x As/i- GaAs step-graded doped-channel field-effect transistor (SGDCFET) has been fabricated and studied. Due to the existence of a V-shaped energy band formed by the step-graded structure, a large output current density, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ed48eaac0efb914343ab032469549c
https://doi.org/10.1006/spmi.1999.0788
https://doi.org/10.1006/spmi.1999.0788
Publikováno v:
Materials Chemistry and Physics. 52:89-93
Two types of new heterostructure field-effect transistors are fabricated and investigated in this paper. The pseudomorphic In x Ga 1 − x As ( x 0.3 Ga 0.7 As (or In 0.49 Ga 0.51 P) layers are used as the active channel and Schottky contact layer, r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48eceeb3629b7f47525747012aeedf88
https://doi.org/10.1016/s0254-0584(98)80012-6
https://doi.org/10.1016/s0254-0584(98)80012-6
Autor:
Jing-Yuh Chen, Wen-Chau Liu, Shiou-Ying Cheng, Wei-Chou Wang, Lih-Wen Laih, Wen-Lung Chang, Po-Hung Lin
Publikováno v:
IEEE Transactions on Electron Devices. 45:373-379
In this paper, a new multiple negative-differential-resistance (MNDR) device based on a metal-insulator-semiconductor-insulator-metal (MISIM)-like structure with step-compositional In/sub x/Ga/sub 1-x/As quantum wells has been fabricated and demonstr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a456cd0cc531261472edf36bc357b6d
https://doi.org/10.1109/16.658669
https://doi.org/10.1109/16.658669
Publikováno v:
Semiconductor Science and Technology. 12:614-622
In this paper we will demonstrate the interesting multiple quantized switching behaviours (MQSB), or the multiple negative differential resistance (MNDR) phenomena, resulting from the avalanche multiplication process and multiple carrier confinement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fa7dc2637804b4c94f3763b575da0cc
https://doi.org/10.1088/0268-1242/12/5/016
https://doi.org/10.1088/0268-1242/12/5/016
Autor:
Jung-Hui Tsai, Wen-Shiung Lour, Kong-Beng Thei, Cheng-Zu Wu, Wen-Chau Liu, Shiou-Ying Cheng, Lih-Wen Laih
Publikováno v:
IEEE Transactions on Electron Devices. 44:520-525
In this paper, a novel InGaP/GaAs multiple S-shaped negative-differential-resistance (NDR) switch based on a heterostructure-emitter bipolar transistor (HEBT) structure is fabricated and demonstrated. An interesting multiple NDR phenomenon resulting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa3e45e4046d818d1471162aa8c3eb98
https://doi.org/10.1109/16.563353
https://doi.org/10.1109/16.563353