Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Liesbeth Reijnen"'
Autor:
Kaushik A. Kumar, Carlos Fonseca, Ton Kiers, Florin Cerbu, Christophe Beral, Guillaume Schelcher, Liesbeth Reijnen, Marc Demand, Mark John Maslow, Tae Kwon Jee, Vadim Timoshkov
Publikováno v:
Optical Microlithography XXXI.
Spacer-assisted pitch multiplication is a patterning technique that is used on many different critical layers for memory and logic devices. Pitch walk can occur when the spacer process, a combination of lithography, deposition and etch processes, pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11190a340b0d6cb7f58d822d99c4ccc6
https://doi.org/10.1117/12.2297345
https://doi.org/10.1117/12.2297345
Autor:
Stijn Schoofs, Mu Feng, Kyohei Koike, Kumar Kaushik, Hidetami Yaegashi, Fumiko Yamashita, Vadim Timoshkov, Shota Yoshimura, Mark John Maslow, Liesbeth Reijnen, Shinya Morikita, Chris Spence, Kiyohito Ito, Carlos Fonseca, Peter Choi, Tae Kwon Jee
Publikováno v:
Advances in Patterning Materials and Processes XXXV.
Extreme UV(EUV) technology must be potential solution for sustainable scaling, and its adoption in high volume manufacturing(HVM) is getting realistic more and more. This technology has a wide capability to mitigate various technical problem in Multi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34bba6132b6143c005f833cbf4f27006
https://doi.org/10.1117/12.2297661
https://doi.org/10.1117/12.2297661
Autor:
Charlotte Chahine, Nader Shamma, David Hellin, Johan Vertommen, Michael Kubis, Katja Viatkina, Daniel Sobieski, Benjamin Kam, Philippe Leray, Liesbeth Reijnen, Melisa Luca, Rich Wise, Guillaume Mernier, Mircea Dusa, Patrick Jaenen, Girish Dixit, Jan Mulkens
Publikováno v:
SPIE Proceedings.
With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD unifor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f97cca33425eb580c04d63c37bd786fd
https://doi.org/10.1117/12.2220591
https://doi.org/10.1117/12.2220591
Autor:
Katja Viatkina, Gian Lorusso, Liesbeth Reijnen, Roel Knops, Gijsbert Rispens, Ming Mao, Timon Fliervoet
Publikováno v:
Advances in Patterning Materials and Processes XXXII.
Contact Hole (CH) Local Critical Dimension Uniformity (LCDU) has a direct impact on device performance. As a consequence, being able to understand and quantifying the different LCDU contributors and the way they evolve during the various process step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c39401ff283e635b20da187f3a57244
https://doi.org/10.1117/12.2085722
https://doi.org/10.1117/12.2085722
Publikováno v:
Chemistry of Materials. 17:4142-4148
Thin films of CuxS are grown by chemical vapor deposition using Cu(thd)2 (thd = tetramethylheptanedionate), H2S, and H2 as the precursors. A deposition profile, not caused by depletion of the precursors, is present in all films. Hydrogen is needed fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91354054507237e3d91c976ff566189d
https://doi.org/10.1021/cm035276v
https://doi.org/10.1021/cm035276v
Publikováno v:
Chemistry of Materials. 17:2724-2728
Thin films of CuxS are deposited by both chemical vapor deposition (CVD) and atomic layer deposition (ALD) using copper bis-tetramethylheptanedionate, Cu(thd)2, and H2S as the precursors. Single-phase CuS and Cu1.8S can be deposited using both techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5afcfeada9d216599d913310fc45b98
https://doi.org/10.1021/cm035238b
https://doi.org/10.1021/cm035238b
Publikováno v:
The Journal of Physical Chemistry B. 108:9133-9137
A new approach to solar cell design is the use of nanostructured heterojunctions of inorganic materials such as n-type TiO 2 and p-type Cu 1 . 8 S, A major challenge is the deposition of the p-type material inside an n-type nanoporous matrix. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::208ee8080eefa42098a8866517a99a6c
https://doi.org/10.1021/jp037641b
https://doi.org/10.1021/jp037641b
Publikováno v:
Chemical Vapor Deposition. 10:45-49
At present, chalcopyrites are widely studied as absorber materials for efficient, low-cost, thin film solar cells. The growth of CuInS 2 thin films by atomic layer deposition (ALD) is studied here. CuInS 2 films are grown on glass, TCO glass (SnO 2 :
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da3185c975cf09cafa8e9a87d5a72284
https://doi.org/10.1002/cvde.200306262
https://doi.org/10.1002/cvde.200306262
Publikováno v:
Thin Solid Films. :492-496
Chalcopyrites are being studied widely as a promising absorber material for high-efficiency, low-cost, thin-film solar cells. The present paper deals with the growth of CuInS 2 thin films by atomic layer deposition. CuInS 2 films are grown on glass,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c45f9eb00f2fad5b287db0fab221882
https://doi.org/10.1016/s0040-6090(03)00230-x
https://doi.org/10.1016/s0040-6090(03)00230-x
Publikováno v:
Materials Science and Engineering: C. 19:311-314
Thin films of p-type Cu 1.8 S have been deposited onto smooth and nanoporous n-type TiO 2 with Atomic Layer Chemical Vapor Deposition (AL-CVD). As precursors, Cu(thd) 2 and H 2 S have been used and self-limited deposition takes place between 125 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77a9440f99292ba995ddb2a331ae6d5c
https://doi.org/10.1016/s0928-4931(01)00406-4
https://doi.org/10.1016/s0928-4931(01)00406-4