Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Liemao Cao"'
Autor:
Che Chen Tho, Xukun Feng, Liemao Cao, Guangzhao Wang, Shi‐Jun Liang, Chit Siong Lau, San‐Dong Guo, Yee Sin Ang
Publikováno v:
Advanced Physics Research, Vol 3, Iss 7, Pp n/a-n/a (2024)
Abstract Recent discovery of ultrathick MoSi2N4(MoN)n monolayers open up an exciting platform to engineer two‐dimensional (2D) material properties via intercalation architecture. In this study, a series of ultrathick MA2N4(M'N) monolayers (M, M' =
Externí odkaz:
https://doaj.org/article/39bf2a54c16e4afbaf06b2a07b9608c8
Autor:
Che Chen Tho, Chenjiang Yu, Qin Tang, Qianqian Wang, Tong Su, Zhuoer Feng, Qingyun Wu, C. V. Nguyen, Wee‐Liat Ong, Shi‐Jun Liang, San‐Dong Guo, Liemao Cao, Shengli Zhang, Shengyuan A. Yang, Lay Kee Ang, Guangzhao Wang, Yee Sin Ang
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 2, Pp n/a-n/a (2023)
Abstract 2D materials van der Waals heterostructures (vdWHs) provide a revolutionary route toward high‐performance solar energy conversion devices beyond the conventional silicon‐based pn junction solar cells. Despite tremendous research progress
Externí odkaz:
https://doaj.org/article/450fdfb845a44758a9638c061ff9c3d8
Autor:
Qianqian Wang, Liemao Cao, Shi-Jun Liang, Weikang Wu, Guangzhao Wang, Ching Hua Lee, Wee Liat Ong, Hui Ying Yang, Lay Kee Ang, Shengyuan A. Yang, Yee Sin Ang
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-9 (2021)
Abstract Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D semiconductor devices
Externí odkaz:
https://doaj.org/article/c8b870b44a754a1e87a0105e5be39dbb
Publikováno v:
InfoMat, Vol 3, Iss 5, Pp 502-535 (2021)
Abstract Electrically contacting two‐dimensional (2D) materials is an inevitable process in the fabrication of devices for both the study of fundamental nanoscale charge transport physics and the design of high‐performance novel electronic and op
Externí odkaz:
https://doaj.org/article/8d8bf01b2de74209a6cab9d36149f754
Publikováno v:
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-9 (2021)
Abstract Strain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GY
Externí odkaz:
https://doaj.org/article/4cc61f1acc8e4c30a0d262a0634feb7e
Publikováno v:
IEEE Transactions on Electron Devices. 70:1509-1519
Autor:
Che Chen Tho, Chenjiang Yu, Qin Tang, Qianqian Wang, Tong Su, Zhuoer Feng, Qingyun Wu, C. V. Nguyen, Wee‐Liat Ong, Shi‐Jun Liang, San‐Dong Guo, Liemao Cao, Shengli Zhang, Shengyuan A. Yang, Lay Kee Ang, Guangzhao Wang, Yee Sin Ang
Publikováno v:
Advanced Materials Interfaces. 10
Publikováno v:
Chemical Physics Letters. 825:140598
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 152:115748
Recent experiment has uncovered semimetal bismuth (Bi) as an excellent electrical contact to monolayer MoS$_2$ with ultralow contact resistance. The contact physics of the broader semimetal/monolayer-semiconductor family beyond Bi/MoS$_2$, however, r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9018040c580e16940c901e45fd55020
http://arxiv.org/abs/2212.03003
http://arxiv.org/abs/2212.03003